2SA726 transistor electrical specification
- 2SA726 Low-frequency PNP transistor
- Collector to emitter voltage is -50V
- Collector to base voltage is -50V
- Emitter to base voltage is -5V
- Collector current is –1A
- Power dissipation is 1W
- DC current gain is 40 to 340hFE
- Transition frequency (FT) is 100MHz
- Junction temperature is between 175℃
- Collector to emitter saturation voltage (VCE (SAT)) is -0.35 to -0.6V
2SA726 transistor Pinout
|Pin Number||Pin Name||Description|
|1||Emitter||Current flows through the emitter terminal|
|2||Collector||Current flows through the collector|
|3||Base||The base is the trigger for the transistor|
2SA726 transistor package
The package used at 2SA726 PNP transistor is TO-92, it is a general-purpose transistor package that can mainly use in most compact transistor components.
The TO-92 package is made with a mixture of plastic and epoxy, these materials are good to withstand heat and most importantly they are compact and lite weight.
2SA726 transistor electrical specification and application description
In this section, we try to descript the electrical specification and application notes about the 2SA726 transistor device.
The terminal voltage specs of the 2SA726 transistor are collector to base voltage and collector to emitter voltage is 50v, then emitter to base voltage is 5v, the terminal voltage specs show that it is a medium power transistor device.
The collector to emitter saturation voltage is 0.35 to 0.6v, the saturation voltage means the switching speed of the transistor.
The collector current value is the maximum load capacity of the 2SA726 transistor, here it is 0.1A.
The power dissipation value of the 2SA726 transistor is 0.1W, it is the lowest value of dissipation.
Current gain specs
The current gain value is between 40 to 340hfE, the DC current gain value indicates the amplification capability.
Transition frequency specs
The transition frequency is 100MHz, this transistor had a low frequency during its operation.
The junction temperature of 175℃, the 2SA726 transistor had a higher value of temperature capacity.
2SA726 transistor equivalent
The transistors such as 2SA0879, 2SA100, 2SA1002, 2SA1003, and 2SA1004 are the equivalent of 2SA726 transistors.
Each of these transistors are been used as replacements in the circuits with almost the same electrical and physical specifications.
2SA726 vs 2SA1006
In this table we try to compare the electrical specifications of 2SA726 and 2SA1006 transistors, this comparison will be really helpful for the replacement process.
|Collector to base voltage (VCB)||-50V||-180V|
|Collector to emitter voltage (VCE)||-50V||-180V|
|Emitter to base voltage (VEB)||-5V||-5V|
|Collector to emitter saturation voltage (VCE (SAT))||-0.35 to -0.6V||-0.4 to 1V|
|Collector current (IC)||-0.1mA||-1.5A|
|Junction temperature (TJ)||175°C||150°C|
|Transition frequency (FT)||100MHZ||80MHZ|
|Gain (hFE)||40 to 340hFE||-|
The voltage specifications of each transistor are different, collector terminal voltage is higher at the 2SA1006 transistor.
The collector current value is higher for 2SA1006, this is the reason why they have more applications at higher current drivers.
The power dissipation is higher at 2SA1006, but the junction temperature, transition frequency, and DC current gain value are higher for the 2SA726 transistor, due to this reason 2SA726 device had more applications in audio systems.
2SA726 transistor applications
- Low-frequency power amplifier applications
- Driver stage amplifier applications
2SA726 transistor characteristics
The figure shows the collector current vs collector to emitter voltage characteristics of the 2SA726 transistor.
At each base current value, the collector current increases with respect to the collector to emitter voltage.
The figure shows the collector to emitter saturation voltage vs collector current characteristics of the 2SA726 transistor.