2N7002e MOSFET
2N7002e specifications
- 2N7002e is an N-channel enhancement mode small signal MOSFET device
- Drain to source voltage (VDS) is 60V
- Drain-to-gate voltage (VDG) is 60V
- Gate to source voltage (VGS) is +/- 20V
- Gate to the threshold voltage (VGS (th)) is 1V, 2V and 2.5V
- Drain current (ID) is 260mA
- Pulsed drain current (IDM) is 2A
- Power dissipation is (PD) is 300mW
- Total gate charge (Qg) is 4 to 0.6nC
- Drain to source on-state resistance (RDS (ON)) 6 to 4Ω
- Rise time is 2ns
- Input capacitance is 7 to 40pF
- Output capacitance is 6pF
- Thermal resistance junction to ambient (Rth j-A) is 357℃/W
- Maximum temperature value (TJ)/(TSTG) is between -55 to 150℃
- Low on-state resistance
- Low gate threshold voltage
- Low input capacitance
- Fast switching speed
- Small surface mount package
- Output leakage
- Low offset voltage
- Low voltage operation
- High-speed circuit
- Low error voltage
- Trench technology
2N7002e Pinout
| Pin Number | Pin Name | Description |
| 1 | Gate | Gate terminal is used to trigger the MOSFET device |
| 2 | SOURCE | In the source, terminal current flows out from the MOSFET |
| 3 | DRAIN | The drain is the input terminal of the MOSFET |
2N7002e package
The 2N7002e small signal MOSFET device has a SOT-23 device package, it is an SMD device package.
SOT-23 is a three-terminal surface mount electronic device package made of epoxy material which had a higher temperature capacity for this compact small-sized device.
2N7002e electrical specification explanation & application note:
Here in this section, we explain the important electrical specifications of the 2N7002e SMD MOSFET device, this detailed explanation is really helpful for a better understanding of the device.
Voltage specs
The terminal voltage value of 2N7002e MOSFET is drain to source voltage 60V and gate to source voltage +/-20V, the voltage values indicate it is a medium power device.
The gate-to-source threshold voltage value is 1V, 2V, and 2.5V, it is the trigger voltage of the device.
This device had multiple voltage options to trigger the MOSFET for the switching feature.
Current specs
The drain current value of 2N7002e MOSFET is 260mA, which is the lowest value, and this shows it had a low load capacity.
The pulsed drain current value is 1.2A, this value is calculated under a specific condition.
Dissipation specs
The power dissipation ability of 2N7002e MOSFET is 300Mw, it is the product of the voltage and current value of the device.
Drain to source on-state resistance
The drain to source on-state resistance value of 2N7002e MOSFET is 1.6 to 4Ω, this value had importance at the circuit level.
Junction temperature
The maximum temperature value of the 2N7002e is –55 to +150℃.
Thermal resistance junction to ambient
The thermal resistance of 2N7002e MOSFET is 357℃/W.
Rise time
The rise time value for 2N7002e MOSFET is 1.2ns, which is the switching time of the device.
Output capacitance
The output capacitance value of 2N7002e MOSFET is 4.6Pf.
Input capacitance
The input capacitance value of 2N7002e MOSFET is 26.7 to 40Pf
2N7002e DATASHEET
If you need the datasheet in pdf please click this link
2N7002e EQUIVALENT
2N7002e small signal SMD MOSFET device have equivalent devices such as BS170, 2N7000, IRFZ44, IRF540N and BS520P, each of them have almost same specs of 2N7002e MOSFET.
2N7002E is an SMD MOSFET device, so we need to check and verify some of the specifications of these devices before the replacement process such as voltage, current, power dissipation, and PINOUT details.
2N7002e vs BS170 (mmbf170)
Here in the table below we listed the electrical specifications of 2N7002e and BS170 (mmbf170) MOSFET devices, this listing comparison is really useful for a better understanding of the device.
| Characteristics | 2N7002e | BS170 (mmbf170) |
|---|---|---|
| Drain to source voltage (VDS)) | 60V | 60V |
| Gate to source voltage (Vgs) | 20V | 20V |
| Gate threshold voltage (Vg(th)) | 1V, 2V and 2.5V | 0.8V, 2.1V and 3V |
| Drain current (Id) | 260mA | 500mA |
| Pulsed drain current (IDM) | 1.2A | 1.2A |
| Total gate charge (Qg) | 0.4 to 0.6nC | - |
| Power dissipation (PD) | 300mW | 300W |
| Junction temperature (TJ) | -55 to +150°C | -55 to +150°C |
| Thermal resistance | 357℃/W | 417℃/W |
| Drain to source on-state resistance (RDS) | 1.6 to 4Ω | 1.2 to 5Ω |
| Rise time (tr) | 1.2ns | - |
| Input capacitance | 26.7 to 40pF | 24 to 40pF |
| Output capacitance | 4.6pF | 17Pf to 30pF |
| Package | SOT-23 | TO-92/SOT-23 |
Characteristics curves of 2N7002e MOSFET
The figure shows the output characteristics of the 2N7002e SMD MOSFET device, the graph plots with drain current vs drain to source voltage.
At the different gate-to-source voltage values, the drain current curve increases with respect to drain-to-source voltage values.
Then after a certain point, the drain current curve reaches a constant value, and after it becomes straight increases of current.
The figure shows on-state resistance characteristics of 2N7002e MOSFET, the graph plots with on-state resistance vs drain current.
At two different gate-to-source voltage values, the on-state resistance curve behaves differently, which means on-state resistance had a higher value when the voltage value is low with respect to the drain current value.
Applications of 2N7002e MOSFET
- Low-side load switches
- Level shift circuit
- DC-DC converter circuit
- Portable applications such as cell phones, direct logic level interface TTL and CMOS.
- Relay driver circuit
- Solenoid driver
- Lamp driver
- Display driver
- Battery operating systems
- Solid state relay driver
- Motor control circuit
- Power management function
