2N7002 MOSFET specification
- 2N7002 is an N-channel enhancement mode MOSFET device
- Drain to source voltage (VDS) is 60V
- Drain to gate voltage (VDG) is 60V
- Gate to source voltage (VGS) is +/- 20V
- Gate to the threshold voltage (VGS (th)) is 1V to 2.5V
- Drain to source on-voltage (VDS(ON)) is 6 to 3.75V
- Drain current (ID) is 115mA
- Pulsed drain current (IDM) is 800mA
- Power dissipation is (PD) is 200mW
- Total gate charge (Qg) is 223pC
- Drain to source on-state resistance (RDS (ON)) 2 to 13.5Ω
- Zero gate voltage drain current (IDSS) is 1 to 500uA
- Turn-ON/OFF time is 20ns
- Output capacitance is 25pF
- Thermal resistance junction to ambient (Rth j-A) is 625℃/W
- Junction temperature (TJ) is between -55 to 150℃
- Low on-state resistance
- Low gate threshold voltage
- Low input capacitance
- Fast switching speed
- High cell density
- DMOS technology
- Provide rugged
- Low input and output leakage
- Low offset voltage
- Low voltage operation
- Low error voltage
2N7002 MOSFET Pinout
|The drain is the input terminal of the MOSFET
|The gate terminal is used to trigger the MOSFET
|In the source, terminal current flows out from the MOSFET
2N7002 MOSFET package
The 2N7002 MOSFET have TO-92 and SOT-23 packages, both of them are the common type of transistor package.
The TO-92 package is mostly used for general-purpose transistor devices, they are made with epoxy/plastic material for high-temperature resistance properties.
The SOT-23 is a three-pin SMD version transistor package, the power dissipation value of these packages is lesser than normal.
2N7002 MOSFET electrical specification explanation
In this section we try to explain the electrical specifications of 2N7002 MOSFET, the specs explanation will be really helpful for a better understanding of this device for the replacement process.
The terminal voltage specs of 2N7002 MOSFET are a drain to source voltage is 60V, the gate to source voltage is 20V, and gate to source threshold voltage is 1 to 2.5V.
The drain to source on-voltage value is 0.6 to 3.75V, it is been calculated under specific conditions.
Overall voltage specifications of 2N7002 MOSFET show that it is a general-purpose device mainly used for power applications.
The drain current value of 2N7002 MOSFET is 115mA, the current values of these devices show the load capacity.
The pulsed drain current value is 800mA, and the pulsed current value of the device is been calculated at a specific condition where the current value is been doubled.
Zero gates voltage drain current
The value for zero gate voltage drain current is 1 to 500uA, it is a specific condition where the gate voltage is at zero and the current is a specific value with respect to voltage value.
The power dissipation value of 2N7002 MOSFET is 200mW, it is the power dissipation capacity of a MOSFET device in a thermal condition.
Drain to source on-state resistance
The drain to source on-state resistance is 1.2 to 13.5Ω, it is the overall resistance offered by the MOSFET.
The junction temperature of the 2N7002 MOSFET is –55 to +150℃.
Thermal resistance junction to ambient
The thermal resistance of 2N7002 MOSFET is 625℃/W
Total gate charge
The total gate charge value of 2N7002 is 223pC, it is the charge needed to trigger the MOSFET.
The rise time value for 2N7002 MOSFET is 20ns, it is the switching time offered by the MOSFET.
The output capacitance value of 2N7002 MOSFET is 25Pf.
2N7002 MOSFET DATASHEET
If you need the datasheet in pdf please click this link
2N7002 MOSFET EQUIVALENT
The MOSFETs such as BS170N, IRF3205, 2N7000, IRF540N, FDC666, and FDC558 are the equivalent devices of 2N7002.
The electrical specs of these MOSFETs devices are the same as 2N7002, so we can use them as the equivalent at circuits.
The main applications based on these 2N7002 MOSFETs are power handling, so we need to check and verify the PINOUT details of these devices before the replacement process.
2N7002 vs 2N7000
In this table we try to compare similar MOSFET devices such as 2N7002 and 2N7000, the electrical specifications comparison is really helpful for a better understanding of these MOSFETs.
|Drain to source voltage (VDS))
|Gate to source voltage (Vgs)
|Gate threshold voltage (Vg(th))
|1 to 2.5V
|Drain to source on-voltage
|0.6V to 3.75V
|2.4V to 9V
|Drain current (Id)
|Pulsed drain current (IDM)
|Zero gate voltage drain current (IDSS)
|1 to 500uA
|Total gate charge (Qg)
|Power dissipation (PD)
|Junction temperature (TJ)
|-55 to +150°C
|-55 to +150°C
|Drain to source on-state resistance (RDS)
|1.2 to 13.5Ω
|Rise time (tr)
Characteristics curves of 2N7002 MOSFET
The figure shows the output characteristics of 2N7002 MOSFET, the graph is plotted with drain current vs drain to source voltage.
At the different gate to source voltage values, the drain current increases in the proper manner with respect to drain to source voltage.
The figure shows the safe operating area of the 2N7002 MOSFET, the graph is plotted with drain current vs drain to source voltage.
In the characteristics curve, different specs are been marked with their boundaries such as temperature specs, switching speed, on-state resistance, and voltage variations.
Applications of 2N7002 MOSFET
- Direct logic-level interface TTL/ CMOS
- Relay driver
- Solenoid driver
- Lamp driver
- Display driver
- Battery operating system (BMS)
- Solid-state relay
- Low current and low voltage switching
- DC-DC converter
- e-MOBILITY applications
- Motor control
- High-speed driver
- Used to reduce on-state resistance