2N7000 MOSFET specification
- It is an N-channel enhancement mode MOSFET device
- Drain to source breakdown voltage (VDSS) is 60V
- Drain to gate voltage (VDG) is 60V
- Gate to source voltage (Vgs) is +/- 20V
- Gate to the threshold voltage (Vg (th)) is 8 to 3V
- Drain to source voltage (VDS (ON)) is 6 to 2.5V
- Drain current (Id) is 200mA
- Power dissipation is (PD) is 400mW
- Drain to source on-state resistance (RDS (ON)) 2 to 5Ω
- Zero gate voltage drain current (IDSS) is 1uA
- Thermal resistance junction to case (Rth j-c) is 5℃/W
- Turn-ON/OFF time is 10ns
- Junction temperature (TJ) is between -55 to 150℃
2N7000 MOSFET Pinout
|Pin Number||Pin Name||Description|
|1||Source||Gate will trigger the MOSFET device|
|2||Gate||In the source, terminal current flows out from the MOSFET|
|3||Drain||In the drain terminal were current flows into the MOSFET|
2N7000 MOSFET package
The 2N7000 MOSFET is made with the TO-92 package, it is a general-purpose package used for such semiconductor devices.
TO-92 is the most compact semiconductor component package, it is made with a mixture of epoxy and plastic material.
The compactness and material used will make the 2N7000 MOSFET device more heat resistant and small in size.
2N7000 MOSFET electrical specification description
In this section, we try to explain the electrical specifications of the 2N7000 MOSFET device.
The voltage specs of the 2n7000 MOSFET are a drain to source voltage is 60V, the gate to source voltage is 20V, the gate threshold voltage is 0.8 to 3v, and drain to source voltage is 0.6 to 2.5v, the voltage specs show that it is a low power MOSFET device.
The drain current value is 200mA for 2n7000 MOSFET, the load capacity of this MOSFET is less.
Zero gate voltage drain current is 1uA,
The power dissipation is 400mW, the 2n7000 MOSFET had a low dissipation
Drain to source on-state resistance
The drain to source on-state resistance is 1.2 to 5Ω, it is the overall resistance of the MOSFET device.
The junction temperature of this MOSFET is -55 to 150℃.
The thermal resistance value of this MOSFET is 312.5℃/W, it is the thermal resistance capacity of the component case.
The time taken for turn ON/OFF is 10ns
2N7000 MOSFET DATASHEET
If you need the datasheet in pdf please click this link
2N7000 MOSFET EQUIVALENT
The MOSFET devices such as BS170, NTE491, IRF3205, IRF540N, IRFZ44, and 2N7002 are the equivalent of 2n7000.
Each of these devices had identical electrical characteristics, so due to this reason, we can use them as the replacement of 2n7000 MOSFET in circuits.
2N7000 vs BS170 vs IRFZ44
In the table below we listed the electrical specification comparison of MOSFET 2n7000 vs bs170 vs irfz44.
|Drain to source voltage (V DSS)||60V||60V||60V|
|Gate to source voltage (Vgs)||+/-20V||+/-20V||+/-20V|
|Gate threshold voltage (Vg(th))||2 to 4V||0.8 to 3V||2 to 4V|
|Drain current (Id)||200mA||500mA||50A|
|Total gate charge (Qg)||-||-||67nC|
|Power dissipation (PD)||400mW||830mW||25W|
|Junction temperature (TJ)||-55 to 150°C||-55 to 150°C||-55 to 175°C|
|Drain to source on-state resistance (RDS)||1.2 to 5Ω||5Ω||0.2Ω|
|Thermal resistance (RɵJA)||312.5℃/W||150℃/W||-|
|Rise time (ton - toff)||10ns||10ns||-|
The voltage specs of each 2N7000 vs BS170 vs IRFZ44 are the same and the current specs of each MOSFET are different and the IRFZ44 had a higher current value.
The power dissipation of IRFZ44 MOSFET is higher, and the on-state resistance of each MOSFET is low.
SMD equivalent of 2n7000 MOSFET
This is the SMD equivalent for the 2n7000 MOSFET device, SOT-23 is the component package.
The electrical characteristics of NDS7000a are almost the same, the current specs, power dissipation, and the on-state resistance value is different from the surface-mount version of 2n7000 MOSFET.
Characteristics curves of 2N7000 MOSFET
The figures show the on-region characteristics of 2n7000 MOSFET, the graph is plotted with the drain to source current vs drain to source voltage.
The graph shows that at the different gate to source voltage ranges, the drain to source current initially increases and becomes constant, and at the same time drain to source voltage increases and becomes infinity.
The figure shows the on-state resistance with gate voltage and drain current characteristics of 2n7000 MOSFET, the graph is plotted with the drain to source on-resistance vs drain current.
Amplifier circuit using 2n7000 MOSFET
The figure shows the simple amplifier circuit using 2n7000 MOSFET, as when the sine wave signal reaches the c1 it will filter out the noise and forward the signal toward the MOSFET.
The 2n7000 MOSFET acts as the amplification agent and amplifies the signal and passes towards the output.
Applications of 2N7000 MOSFET
- High voltage switching systems
- Small signal switching
- Low power analog converter
- Inverter circuits