2N6107 transistor

2N6107 transistor
2N6107 transistor

2N6107 transistor electrical specification

  • 2N6107 is a PNP bipolar junction silicon power transistor device
  • Collector to emitter voltage (VCE) is 70V
  • Collector to base voltage (VCB) is 80V
  • Emitter to base voltage (VEB) is 5V
  • Collector current is 7A
  • Base current is 3A
  • Power dissipation is 40W
  • DC current gain is 30 to 150hFE
  • Transition frequency (FT) is 10MHz
  • Junction temperature is between -65 to 150℃
  • Collector to emitter saturation voltage (VCE (SAT)) is5V
  • Output capacitance (Co) is 250pF
  • Thermal resistance, junction to the case is 125℃/W
  • High DC current gain
  • High bandwidth

2N6107 transistor Pinout

2N6107 transistor Pinout
2N6107 transistor Pinout
Pin Number Pin Name Description
1 Base The base terminal is the trigger for the transistor
2 Collector Current flow through the collector 
3 Emitter  Current flows through the emitter


2N6107 transistor package

The 2N6107 transistor uses the TO-220 package, it is a power device package mainly used for heavy components.

The TO-220 package is made with epoxy/plastic material and also the back portion is made with metal for heat transferring properties.

The 2N6107 is a through-hole transistor device made to withstand higher power, so we can attach a heat sink with it. 

2N6107 transistor electrical specification description/ application

In this section we try to explain the electrical specifications of the 2N6107 transistor, it is very useful for a better understanding of this device.

Voltage specs

The terminal voltage specs of the 2N6107 transistor are collector to emitter voltage is 70V, collector to base voltage is 80V, and emitter to base voltage is 5V.

The collector to emitter saturation voltage is 3.5V, it is the voltage value always lesser than the base voltage, and it is the region switching voltage value of 2N6107 transistor.

Overall voltage specifications of the 2N6107 transistor show that it is a medium power device used for some applications.

Current specs

The collector current value is 7A, this shows 2N6107 transistor works under 7A load capacity.

The current value for the 2N6107 transistor is higher, this is why they are been used in power driver applications.

Dissipation specs

The power dissipation of the 2N6107 transistor is 40W, it is the power dissipation of the device.

Current gain specs

The current gain value of the 2N6107 transistor is 30 to 150hFE, the amplifier applications using this are less due to the low DC current gain value.

Transition frequency

The bandwidth transition frequency value of the 2N6107 transistor is 10MHz, it is the frequency range of the transistor.

Junction temperature

 The junction temperature of -65 to 150℃, the heat capacity of the transistor is mainly dependent on the case.

Thermal resistance

The thermal resistance of the 2N6107 transistor case is 3.125℃/W

Output capacitance

The output capacitance of the 2N6107 transistor is 250pF

2N6107 transistor DATASHEET

If you need the datasheet in pdf please click this link

2N6107 transistor equivalent

The transistors such as NTE197, 2N6110, 2N6491, BD710, BD744B, BDT94, BD910, and BD744C are the equivalent transistors of 2N6107.

The 2N6107 PNP transistor is a power device, so the electrical specification of these transistors are the same.

2N6107 complementary pair

The 2N6107 transistor had 2N6288 AND 2N6292 NPN transistor complementary pair, due to the similar electrical specification we make complement pair circuits and Darlington pair with these transistors.

2N6107 vs BD912 vs NTE197

In this table, we try to list the electrical specifications of 2N6107, BD912, and NTE197 transistors, this is helpful for the replacement process.

Collector to emitter voltage (VCE)     70V100V80V
Collector to base voltage (VCB)80V100V70V
Emitter to base voltage (VEB)5V5V5V
Collector to emitter saturation voltage (VCE (SAT))3.5V1 to 3V3.5V
Collector current (IC)7A15A7A
Power dissipation40W90W40W
Junction temperature (TJ)-65 to +150°C-65 to +150°C-65 to +150°C
Thermal resistance3.125℃/W--
Transition frequency (FT)10MHZ3MHZ  10MHz
Gain (hFE)30 to 150hFE5 to 250hFE30 to 150hFE
Output capacitance250pF-    250pF

2N6107 transistor applications

  • Amplifier applications
  • Switching applications
  • Relay driver
  • LED driver
  • Amplifier modules
  • Signal amplifier circuits
  • Darlington pair

Characteristics curves of 2N6107 transistor

Characteristics curves of 2N6107 transistor
Characteristics curves of 2N6107 transistor

The figure shows the active region safe operating area characteristics of the 2N6107 transistor, the graph is been plots with different quantities such as collector current, collector to emitter voltage, switching values, and temperature ranges.

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