2N6107 transistor electrical specification
- 2N6107 is a PNP bipolar junction silicon power transistor device
- Collector to emitter voltage (VCE) is 70V
- Collector to base voltage (VCB) is 80V
- Emitter to base voltage (VEB) is 5V
- Collector current is 7A
- Base current is 3A
- Power dissipation is 40W
- DC current gain is 30 to 150hFE
- Transition frequency (FT) is 10MHz
- Junction temperature is between -65 to 150℃
- Collector to emitter saturation voltage (VCE (SAT)) is5V
- Output capacitance (Co) is 250pF
- Thermal resistance, junction to the case is 125℃/W
- High DC current gain
- High bandwidth
2N6107 transistor Pinout
|The base terminal is the trigger for the transistor
|Current flow through the collector
|Current flows through the emitter
2N6107 transistor package
The 2N6107 transistor uses the TO-220 package, it is a power device package mainly used for heavy components.
The TO-220 package is made with epoxy/plastic material and also the back portion is made with metal for heat transferring properties.
The 2N6107 is a through-hole transistor device made to withstand higher power, so we can attach a heat sink with it.
2N6107 transistor electrical specification description/ application
In this section we try to explain the electrical specifications of the 2N6107 transistor, it is very useful for a better understanding of this device.
The terminal voltage specs of the 2N6107 transistor are collector to emitter voltage is 70V, collector to base voltage is 80V, and emitter to base voltage is 5V.
The collector to emitter saturation voltage is 3.5V, it is the voltage value always lesser than the base voltage, and it is the region switching voltage value of 2N6107 transistor.
Overall voltage specifications of the 2N6107 transistor show that it is a medium power device used for some applications.
The collector current value is 7A, this shows 2N6107 transistor works under 7A load capacity.
The current value for the 2N6107 transistor is higher, this is why they are been used in power driver applications.
The power dissipation of the 2N6107 transistor is 40W, it is the power dissipation of the device.
Current gain specs
The current gain value of the 2N6107 transistor is 30 to 150hFE, the amplifier applications using this are less due to the low DC current gain value.
The bandwidth transition frequency value of the 2N6107 transistor is 10MHz, it is the frequency range of the transistor.
The junction temperature of -65 to 150℃, the heat capacity of the transistor is mainly dependent on the case.
The thermal resistance of the 2N6107 transistor case is 3.125℃/W
The output capacitance of the 2N6107 transistor is 250pF
2N6107 transistor DATASHEET
If you need the datasheet in pdf please click this link
2N6107 transistor equivalent
The transistors such as NTE197, 2N6110, 2N6491, BD710, BD744B, BDT94, BD910, and BD744C are the equivalent transistors of 2N6107.
The 2N6107 PNP transistor is a power device, so the electrical specification of these transistors are the same.
2N6107 complementary pair
The 2N6107 transistor had 2N6288 AND 2N6292 NPN transistor complementary pair, due to the similar electrical specification we make complement pair circuits and Darlington pair with these transistors.
2N6107 vs BD912 vs NTE197
In this table, we try to list the electrical specifications of 2N6107, BD912, and NTE197 transistors, this is helpful for the replacement process.
|Collector to emitter voltage (VCE)
|Collector to base voltage (VCB)
|Emitter to base voltage (VEB)
|Collector to emitter saturation voltage (VCE (SAT))
|1 to 3V
|Collector current (IC)
|Junction temperature (TJ)
|-65 to +150°C
|-65 to +150°C
|-65 to +150°C
|Transition frequency (FT)
|30 to 150hFE
|5 to 250hFE
|30 to 150hFE
2N6107 transistor applications
- Amplifier applications
- Switching applications
- Relay driver
- LED driver
- Amplifier modules
- Signal amplifier circuits
- Darlington pair
Characteristics curves of 2N6107 transistor
The figure shows the active region safe operating area characteristics of the 2N6107 transistor, the graph is been plots with different quantities such as collector current, collector to emitter voltage, switching values, and temperature ranges.