2N5952 JFET MOSFET
2N5952 JFET specification
- The 2N5952 is an N-channel JFET MOSFET device
- Drain to gate voltage (VDG) is 30V
- Gate to source voltage (Vgs) is +/- 30V
- Gate to source cutoff voltage (Vgs (off)) is 3 to 3.5V
- Gate to source breakdown voltage (V (BR) GSS) is -30V
- The forward gate current (IGF) is 10mA
- Drain current (Id) is 008A
- Power dissipation is (PD) is 350mW
- Drain to source on-state resistance (RDS (ON)) nil
- Zero gate voltage drain current (IDSS) 8mA
- Thermal resistance junction to case (Roth j-c) is 125℃/W
- Noise figure (NF) is 2dB
- Junction temperature (TJ) is between -55 to 150℃
2N5952 MOSFET Pinout
| Pin Number | Pin Name | Description |
| 1 | Gate | Gate will trigger the MOSFET device |
| 2 | Source | Source is the terminal used to control the input of the device. |
| 3 | Drain | Drain is the output of the MOSFET |
2N5952 JFET package
The 2N5952 JFET device had a TO-92 package, the TO-92 is a package mostly used at general-purpose transistor devices.
The TO-92 package is been made with a mixture of plastic and epoxy material, the compatibility and cost efficiency of the 2N5952 JFET will make it a good device.
2N5952 JFET electrical specification description
In this section, we try to explain the electrical specifications and application description of 2N5952 JFET.
Voltage specs
The voltage specifications of 2N5952 will be listed with terminal voltage, drain to gate voltage is 30V, the gate to source voltage is 30v, the gate to source breakdown voltage is -30v, and gate to source cutoff voltage is -1.3 to 3.5v.
The voltage specs of 2N5952 state that, these JFET MOSFETs are been mainly used for switching applications.
Current specs
The drain current is 0.008A and the gate forward current is 10mA for the 2N5952 JFET device, the current specs of the device state the load capability.
The 2N5952 current values are low due to switching applications.
Dissipation specs
The dissipation of the 2N5952 JFET transistor is 350Mw, the power dissipation value shows this device had a minimum value of dissipation.
Thermal resistance, junction to case value of 2N5952 is 125℃/W, this is the heat value at the case.
Junction temperature
The junction temperature of this JFET is 150℃.
Noise figure
The noise figure value is 2dB, the noise value is lower for a JFET device.
2N5952 JFET DATASHEET
If you need the datasheet in pdf please click this link
2N5952 JFET EQUIVALENT
The transistors such as 2n500, 2n5000, 2n5001, 2n5002, 2n5001s, and 2n50 are the equivalent devices of 2n5952 JFET.
The electrical specifications of transistors in these lists had the same value and it is the perfect replacement.
2N5952 vs 2N50
In this table, we listed the electrical specification comparison of 2N5952 and 2N50 semiconductor devices.
| Characteristics | 2N5952 | 2N50 |
| Gate to source breakdown voltage (VBR (GSS)) | -30V | 30V |
| Gate to source voltage (VGS) | 30V | 30V |
| Gate threshold voltage (VDG) | 30V | 500V |
| Drain current (Id) | 0.008A | 2A |
| Power dissipation (PD) | 350W | 50W |
| Junction temperature (TJ) | 150°C | 150°C |
| Drain to source on-state resistance (RDS) | – | 3.9ohm |
| Noise figure (NF) | 2dB | – |
| Package | TO-92 | TO-252 |
Applications of 2N5952 JFET
- Electronic switching
- Low on-resistance analogue switching
2N5952 JFET switching circuit
The figure shows the 2N5952 JFET-based switching circuit, as we know the gate is the trigger of the device, the source is the input for the JFET, and drain is used as the output of the device.
When the square wave reaches the gate, it will trigger immediately and the source to drain junction become energized and at the drain, an output is produced and the lamp glows.
