2N5551 transistor electrical specification
- 2N5551 is an NPN high voltage transistor device
- Collector to emitter voltage is 160V
- Collector to base voltage is 180V
- Emitter to base voltage is 6V
- The Collector current is 300mA
- Peak base current is 100mA
- Power dissipation is 630mW
- DC current gain is 30 to 250hFE
- Current gain-bandwidth (FT) is 100 to 300MHz
- Junction temperature is between -65 to +150℃
- Collector to emitter saturation voltage (VCE (SAT)) is 150 to 200mV
- Noise figure is 10dB
- High voltage transistor
- Low current
- Fast switching
- Less error voltage
2N5551 transistor Pinout
|Current flows through the collector
|The base is the trigger for the transistor
|From emitter current starts flowing
2N5551 transistor package
The 2N5551 transistor package is TO-92, it is a package mainly used for general purpose transistors having medium power handling capability.
The TO-92 transistor package will be made with two materials such as epoxy and plastic, the usage of such material makes the transistor more heat resistant and compact.
2N5551 transistor electrical specification and application explanation
In this section, we try to explain the electrical specification of the 2N5551 transistor and its application notes.
The terminal voltage specs of the 2N5551 transistor are collector to base voltage is 180V, collector to emitter voltage is 160V, and emitter to base voltage is 6V, the voltage specs shows that it is a high voltage transistor.
The collector to emitter saturation voltage is 150 to 200Mv.
Collector current value is 300mA, it is the overall load capacity of the transistor in all circuit applications.
The power dissipation value of this transistor is 630mW,
Current gain specs
The DC current gain value is 30 to 250 for the 2N5551 transistor, it is a very important value for amplifier applications.
Current gain-bandwidth transition frequency
The bandwidth transition frequency value of the 2N5551 transistor is 100 to 300MHz, it is the frequency range of this transistor.
With the junction temperature of -65 to 150℃, the heat capacity of the transistor is mainly dependent on the case.
The noise value of the 2N5551 transistor is 10dB, it is a moderate value for an audio component.
2N5551 transistor DATASHEET
If you need the datasheet in pdf please click this link
2N5551 transistor equivalent
The 2N5551 transistor had equivalent devices such as NTE194, 2N3055, BC487, BC639, 2N5833, and BC637.
The electrical specs of each of these transistors are almost the same as the 2N5551 transistor, so we can replace the circuits.
Before the replacement process, we need to check and verify the PINOUT details of each transistor.
2N5551 transistor complementary
The 2N5551 NPN transistor had PNP complementary transistor 2N5401, this complementary pair had many applications in circuits.
SMD versions of 2N5551 transistor
The 2N5551 transistor had SMD version transistors such as 2N5551S (SOT-23), KST43 (SOT-23), DXT5551 (SOT-89) and DZT5551 (SOT-223).
2N5551 vs 2N2222 vs 2N3904
In the table, we try to compare the electrical specifications of each transistor such as 2N5551, 2N2222, and 2N3904, this comparison is really helpful for the replacement process.
|Collector to base voltage (VCB)
|Collector to emitter voltage (VCE)
|Emitter to base voltage (VEB)
|Collector to emitter saturation voltage (VCE (SAT))
|150 to 200mV
|0.4V to 1.6V
|0.2V to 0.3V
|Collector current (IC)
|Junction temperature (TJ)
|-65 to +150°C
|-65 to +200°C
|-55 to +150°C
|Transition frequency (FT)
|100 to 300MHZ
|30 to 250hFE
|30 to 300hFE
|30 to 300hFE
|Noise figure (NF)
|Rise time (tr)
The 2n55551 transistor had a higher voltage value, and the 2n2222 and 2n3904 transistors had the same voltage values.
2N5551 transistor applications
- Used for higher voltage general purpose applications
- Audio amplifier circuits
- LED driver circuits
- Darlington pair
- Signal amplifier
- Current amplifier
- Small signal booster circuits
2N5551 transistor characteristics
The figure shows the DC current gain characteristics of the 2N5551 transistor, the graph is plotted with DC current gain vs collector current.
The characteristics variations are been varies with the collector to emitter voltage, the DC current gain starts increasing from a limit with respect to temperature values.
The figure shows the collector saturation region characteristics of the 2N5551 transistor, the graph is plotted with the collector to emitter voltage vs base current.