2N5484 JFET transistor
2N5484 electrical specification
- 2N5486 N-channel depletion RF amplifier JFET transistor device
- Drain-to-gate breakdown voltage (VDG) is 25V
- Gate-to-source voltage (VGS) is 25V
- Gate to source cutoff voltage (VGS (OFF)) is -0.3 to -3.0V
- Drain current (ID) is 30mA
- Gate forward current (IGF) is 10mA
- Power dissipation (PD) is 350mW
- Zero gate voltage drain current (IDSS) is 1 to 5mA
- Input capacitance (Ciss) is 5Pf
- Output capacitance (Co) is 2pF
- Junction temperature, storage (TJ) / (Tstg) is between -65 to 150℃
- Forward transfer admittance (Yfs) is 3000 to 6000umhos
- Noise figure (NF) is 5 to 4dB
- LOW noise
- Low input capacitance
- Low leakage
|The drain terminal is the current inlet of the JFET device
|In the source, terminal current flows out from the JFET
|Gate is used to trigger the MOSFET device
2N5484 RF amplifier JFET transistor device has TO-92 general purpose device package.
TO-92 is a three-terminal through-hole package made of epoxy/plastic material this will provide you with higher temperature capacity and compactness as an electronic component.
The shape and size of the TO-92 package are apt for small circuits.
2N5484 transistor specification/ application description note:
Here in this section, we explained the electrical specifications of the 2N5484 transistor, it is very useful for a better understanding of the device.
The voltage specifications of the 2N5484 JFET transistor are a drain to the gate is 25V, the gate to the source is 25V and gate to source cutoff voltage is -0.3V to -3.0V, the terminal voltage values indicate it is low power JFET device.
The drain current value of 2N5484 JFET is 40mA, it is the load capacity of the device.
The forward gate current value is 10Ma, this value is important for the trigger of the 2N5484 JFET device.
The power dissipation value of the 2N5484 JFET device is 350Mw, this value is important for the device package.
The maximum temperature value of the 2N5484 JFET transistor is -65 to +150℃.
The input capacitance value of 2N5484 JFET transistor is 5pF
The output capacitance value of 2N5484 JFET transistor is 2pF
The noise figure value at the 2N5484 transistor is 2.5 to 4dB
If you need the datasheet in pdf please click this link
The JFET device 2N5484 has equivalent transistors such as 2N5001, 2N5002, J113, BF245, 2N4416, PN4416, and 2N3819, each of them has the same set of electrical specifications as 2N5484 JFET device.
2N5484 JFET is an amplifier transistor, so the specs such as voltage, current, and noise figure values are important for those applications, check and verify each transistor before the replacement process.
2N5484 SMD equivalent
MMBF5484 (SOT-23) is the SMD equivalent of the 2N5484 JFET transistor.
2N5484 vs J113 vs 2N3819
Here in the table below, we listed the electrical specifications of 2N5484, J113, and 2N3819 transistors, these type of comparison is really useful for a better understanding of the device.
|Source to gate voltage (VSG)
|Gate to source cutoff voltage (VGS(OFF))
|-0.3 to -3.0V
|-0.3 to -3.0V
|Gate to source voltage (VGS)
|Drain current (ID)
|Gate forward current (IG(F))
|Power dissipation (PD)
|Junction temperature (TJ)
|-65 to 150°C
|-55 to +150°C
|-65 to 150°C
|Input capacitance (Ciss)
|Noise figure (NF)
|2.5 to 4dB
2N5484 transistor application
- VHF/UHF amplifier circuit
- High-frequency amplifier circuit
- Mixer circuit applications
- Oscillator circuit
- Very Low-level capacitance
- Switching circuit
- Low gain signal amplifier circuit
- Preamp applications
- Sensor circuits
- Detector circuits
Graphical characteristics of 2N5484 transistor
The figure shows the transfer characteristics of the 2N5484 JFET transistor, the graph plots with drain current vs gate to source voltage.
At constant drain to a source voltage value, and two gates to source cutoff voltage values, the curves are plotted at different temperature values, a higher drain current value happens at a low voltage value.
The figure shows the noise figure characteristics of the 2N5484 JFET transistor and the graph plots with noise figure vs frequency.
At constant voltage, current resistance, and temperature values, the noise figure value increase from a lower value to a higher value with respect to frequency.