2N5458 JFET specification
- 2N5458 is a general-purpose N-channel depletion-mode JFET device
- Drain to source breakdown voltage (VSG) is 25V
- Drain to gate voltage (VGS) is –25V
- Gate to source cutoff voltage (VGS (OFF)) is -1.0 to -7.0V
- Gate to source voltage (VGS) is -3.5V
- Drain gate forward current (IGF) is 10mA
- Power dissipation is (PD) is 310mW
- Zero gate voltage drain current (IDSS) is 2 to 9mA
- Input capacitance (Ciss) is 5 to 7pF
- Junction temperature (TJ) is between -65 to 150℃
- Noise figure (NF) is 3dB
- N-channel for higher gain
- Drain and source interchangeable
- High AC input impedance
- High DC input resistance
- Low transfer and input capacitance
- Low cross-modulation and intermodulation distortion
2N5458 JFET PINOUT
|The gate is the trigger for the JFET device
|In the source, terminal current flows out from the JFET
|The drain terminal is the current inlet of the JFET device
2N5458 JFET package
The 2N5458 JFET device is made with a TO-92 package, it is a general-purpose device package.
The TO-92 is made with epoxy or plastic material, these materials are good at heat resistance and also have high power electrical capacity.
The smaller size of the TO-92 package is another specialty, this is the reason behind the compactness of circuits.
2N5458 JFET electrical specification and application description
In this section, we try to explain the electrical specifications of the 2N5458 JFET device, these explanations will be really helpful for the replacement process at the circuits.
The voltage specs of the 2N5457 JFET are the source to gate voltage is 25V and gate to source voltage is -3.5V, the terminal voltage specs show that it is a general-purpose device.
The gate to source cutoff voltage is -1.0V to -7.0V, it is the cutoff voltage value of the JFET device at a specific condition.
The voltage specifications of the 2N5458 JFET device show that it is a general-purpose device mainly used for simple applications.
The gate forward current value of 2N5458 JFET is 10mA, it is the current that flows through the JFET after the voltage supplies.
The current value shows the overall load capacity of this device, the 2n5458 JFET had low power applications.
Zero gates voltage drain current
The zero gate voltage drain current value is 2 to 9mA, it is the current value under the special condition where the gate voltage is zero.
The power dissipation is 310mW for the 2n5458 JFET device, it is the lowest value for a semiconductor device.
The junction temperature of 2N5458 JFET is -65 to +150℃.
The capacitance value offered by the 2N5458 JFET device at the input is 4.5 to 7.0pF
The noise figure value is 3dB, it is the noise value of the device for audio applications.
2N5458 JFET DATASHEET
If you need the datasheet in pdf please click this link
2N5458 JFET EQUIVALENT
The JFET devices such as 2N5457, 2N5459, NTE312, and 2SK518 are the equivalent of 2N5458 JFET.
The electrical specifications of all of these JFET devices are almost the same, so we can use them as the equivalent at the circuits.
The 2N5458 JFETs are the general-purpose device, due to this reason power specs of them are very low.
Before the replacement process, we need to check and verify the PINOUT details, because any difference in the network will badly affect the component.
2N5458 vs J201 vs NTE312
In the table below, we listed the electrical specifications of 2N5458 vs J201 vs NTE312 JFETs.
|Source to gate voltage (VSG)
|Gate to source cutoff voltage (VGS(OFF))
|-1.0 to -7.0V
|-0.3 to -1.5V
|Gate to source voltage (VGS)
|Gate forward current (IG)
|Zero gate voltage drain current (IDSS)
|2 to 9mA
|0.2 to 1mA
|5.0 to 15mA
|Power dissipation (PD)
|Junction temperature (TJ)
|-65 to 150°C
|-55 to 150°C
|-65 to 150°C
|Input capacitance (Ciss)
|4.5 to 7pF
|Noise figure (NF)
|2 to 4dB
The voltage specifications of the three general-purpose devices are slightly different and the J201 JFET device had higher values.
Other than that, almost all the important specs of 2N5458, J201, and NTE312 are the same.
Characteristics curves of 2N5458 JFET
The figures show the drain characteristics of 2N5458 JFET, the graph is plotted with drain current vs drain to source voltage.
In a changing gate to source voltage, the drain current value increases with increases in voltage value.
The figure shows the noise voltage vs frequency characteristics of the 2N5458 JFET device, the graph is plotted with noise voltage vs frequency.
At the fixed voltage and current values, the noise voltage starts at a higher value and drops down to the lowest value.
Applications of 2N5458 JFET
- Low-level audio amplifier circuits
- Switching circuits
- Used for analog switching applications
- Pre-amp circuits
- Low level and low gain signal amplifier circuits
- Sensor circuits
- Detector circuits