2N5457 JFET
2N5457 JFET specification
- It is an N-channel depletion-mode JFET device
- Drain to source breakdown voltage (VDS) is 25V
- Drain to gate voltage (VDG) is 25V
- Gate to source voltage (Vgs (OFF)) is -0.5 to -6.0V
- Drain gate (IG) is 10mA
- Power dissipation is (PD) is 310mW
- Zero gate voltage drain current (IDSS) is 1 to 5mA
- Forward transfer admittance (Yfs) is 1000 to 5000umhos
- Input capacitance (Ciss) is 5 to 7pF
- Junction temperature (TJ) is between -55 to 135℃
- N-channel for higher gain
- Drain and source interchangeable
- High AC input impedance
- High DC input resistance
- Low transfer and input capacitance
- Low cross-modulation and intermodulation distortion
2N5457 JFET PINOUT
| Pin Number | Pin Name | Description |
| 1 | Drain | The drain is the terminal where current flows into the JFET |
| 2 | Source | In the source, terminal current flows out from the JFET |
| 3 | Gate | A Gate terminal is used to trigger the JFET |
2N5457 JFET package
The 2N5457 JFET device had a TO-92 package, it is a package made of plastic encapsulated.
TO-92 is a package made to resist higher value temperatures, this is why 2N5457 JFET is made with a mixture of epoxy and plastic material.
The TO-92 package is made compact and weighs less, due to the reason 2n5457 JFET are used at small circuits.
2N5457 JFET electrical specification and application description
In this section, we try to explain the specifications of 2N5457 JFET and the application description.
Voltage specs
The voltage specs of the 2N5457 JFET are a drain to source voltage is 25V, drain to gate voltage is 25V, and gate to source cutoff voltage is -0.5V to -6.0V, the voltage value shows that it is a general-purpose device used for multiple applications.
Current specs
The gate current value of 2N5457 JFET is 10mA, it is the triggering current needed to switch the device.
Zero gate voltage drain current is 1 to 5mA, it is the current value that we calculated at the condition where the gate voltage is zero and drain to source voltage at a specific value.
Dissipation specs
The power dissipation is 310mW for the 2n5457 JFET device, it is the lowest value for a semiconductor device.
Junction temperature
The junction temperature of this JFET is +135℃.
Forward transfer admittance
The forward transfer admittance |Yfs| is 1000 to 5000umhos
Input capacitance
The capacitance value offered by the 2N5457 JFET device at the input is 4.5 to 7pF
2N5457 JFET DATASHEET
If you need the datasheet in pdf please click this link
2N5457 JFET EQUIVALENT
The JFET devices such as 2N4339, J201, 2N4341, 2N5458, NTE458, and J109, are the equivalents of 2N5457 JFET.
Each of these devices is an N-channel JFET type and also the electrical and physical specification is the same as 2N5457 JFET.
We can easily use these JFET devices as the replacement for 2N5457.
2N5457 vs 2N5458 vs J201
In the table below we listed the electrical specifications of 2N5457, 2N5458, and J201, this comparison is helpful for the replacement.
| Characteristics | 2N5457 | 2N5458 | J201 |
|---|---|---|---|
| Drain to source voltage (V DS) | 25V | 25V | 40V |
| Gate to source voltage (Vgs (OFF)) | -0.5 to -6.0V | -1.0 to -7.0V | -0.3 to -1.5V |
| Drain to gate voltage | 25V | 25V | 40V |
| Gate current (IG) | 10mA | 10mA | 50mA |
| Zero gate voltage drain current (IDSS) | 1 to 5mA | 2 to 9mA | 0.2 to 1mA |
| Power dissipation (PD) | 310mW | 625mW | 625mW |
| Forward transfer admittance (Yfs) | 1000 to 5000umhos | 1500 to 5500umhos | 500umhos |
| Junction temperature (TJ) | -55 to 135°C | -55 to 135°C | -55 to 150°C |
| Input capacitance (Ciss) | 4.5 to 7pF | 4.5 to 7pF | - |
| Package | TO-92 | TO-92 | TO-92 |
The 2N5457 and 2N5458 JFET devices have the almost same electrical specification, only a variation happens on VGS (OFF), IDSS, power dissipation, and admittance.
The J201 is a different JFET device, so the electrical specs of the J201 are higher.
SMD equivalent of 2N5457 JFET
The SMD equivalent of 2N5457 JFET is MMBF5457 (SOT-23), the voltage and current specs of this JEFT are almost the same as the 2N5457 through-hole model.
The power dissipation and capacitance value is different in its SMD version.
Characteristics curves of 2N5457 JFET
The figures show the noise figure vs resistance characteristics of 2N5457 JFET, at a fixed drain to source voltage.
The noise figure value is dipping towards the lowest value and the resistance increases.
The figure shows the drain characteristics of 2N5457 JFET, the graph is plotted with drain current vs drain to source voltage.
At a fixed gate to source voltage, the drain current will increase with respect to the gate.
Applications of 2N5457 MOSFET
- Audio amplifier circuits
- Small switching circuits
- Audio modulation circuit
- Tone controlling circuit
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