2N5401 transistor electrical specification
- 2N5401 is a PNP bipolar junction Power transistor device
- Collector to emitter voltage is -150V
- Collector to base voltage is -160V
- Emitter to base voltage is -5V
- Collector current is -300mA
- Pulsed collector current is -600mA
- Base current is -100mA
- Power dissipation is 630mW
- DC current gain is 50 to 240hFE
- Current gain-bandwidth (FT) is 100 to 300MHz
- Junction temperature is between -55 to 150℃
- Thermal resistance is 200K/W
- Noise figure is 8pF
- Collector to emitter saturation voltage (VCE (SAT)) is -200 to -500mV
- High voltage transistor device
- Low current
- Low voltage
2N5401 transistor Pinout
|The collector terminal is acts as the output of the transistor
|The terminal is the trigger for the transistor
|The emitter acts as the input for the transistor
2N5401 transistor package
The 2N5401 transistor has a TO-92 transistor package, we know the 2n5401 transistor is a higher voltage device that has many applications.
TO-92 is a transistor package made with a mixture of epoxy and plastic, these materials are good at heat resistance and also they are compact or have less weight.
2N5401 transistor explanation for electrical specification and application
In this section, we try to explain the electrical specification of the 2N5401 transistor and also a short description of the applications.
The terminal voltage specs of the 2N5401 transistor are collector to base voltage is -160V, collector to emitter voltage is -150V, and emitter to base voltage is -5V, the voltage specs of this transistor show that they are capable to handle the higher voltage.
The collector to emitter saturation voltage is -200 to -500mV, it is the voltage value that indicates a specific condition.
The collector current value is -300mA, it is the total load capacity of the 2N5401 transistor.
The pulsed collector current value is -600mA, the value is exactly double that of the current specs, this value is calculated at the condition when the temperature is not reached at the maximum.
The current value shows that the 2N5401 transistor is capable of switching applications.
The power dissipation value of the 2N5401 transistor is 630mW, it is the dissipation capacity of the transistor.
Current gain specs
The current gain value of the 2N5401 transistor is 50 to 240hFE, it is the amplification capacity of this transistor.
The bandwidth transition frequency value of the 2N5401 transistor is 100 to 300MHz, it is the frequency range of the transistor.
The junction temperature is -65 to 150℃ for the transistor, it is the capacity of the device at the temperature change.
The thermal resistance between, junction to ambient is 200K/W
The noise figure value of the 2N5401 transistor is 8pF
2N5401 transistor DATASHEET
If you need the datasheet in pdf please click this link
2N5401 transistor equivalent
The transistor devices such as MPSA92, BF723, 2N5096, 2SA709, 2SA1207, and 2SC2909 are the equivalents of the 2N5401 transistor.
The electrical specifications of each transistor are the same as 2N5401, so we easily replace them with these transistors at circuits.
Before the replacement process, we need to check and verify the PINOUT of each transistor.
2N5401 transistor complementary
The 2N5401 PNP transistor had complimentary pair of 2N5551 NPN transistors, this complementary pair is used in some general-purpose and high voltage applications.
SMD versions of the 2N5401 transistor
The SMD transistors such as 2N5401s (SOT-23), MMBT5401 (SOT-23), DZT5401 (SOT-223), and DXT5401 (SOT-89) are the SMD equivalents of 2N5401 transistor.
Most of the electrical specs of these SMD transistors are similar to the 2N5401 through-hole device, but the specs like power dissipation are different.
2N5401 vs A733 vs 2SA709
In the table, we listed the electrical specifications of 2N5401, A733, and 2SA709 transistors, this comparison will help us to know about these three transistors and it is useful for the replacement process.
|Collector to base voltage (VCB)
|Collector to emitter voltage (VCE)
|Emitter to base voltage (VEB)
|Collector to emitter saturation voltage (VCE (SAT))
|-200V to -500mV
|-0.18 to 0.3V
|-0.3 to -0.4V
|Collector current (IC)
|Junction temperature (TJ)
|-65 to +150°C
|-55 to +150°C
|-55 to +150°C
|Transition frequency (FT)
|100 to 300MHZ
|50 to 180MHZ
|50 to 240hFE
|90 to 600hFE
|40 to 400hFE
2N5401 transistor applications
- General-purpose switching applications
- Amplifier circuits
- Telephony applications
- Motor driver circuit
Amplifier circuit using 2N5401 transistor
The figure shows the amplifier circuit using 2n5401 and 2n5551 complementary pairs, the circuit consists of two-stage amplification.
The first 2N5551 transistor pair works as the preamp at this circuit, and the amplified signal reaches the second stage having two complementary pairs.
A push-pull operation happens at two 2n5401-2n5551 complement pairs, producing an amplified signal.
Motor driver circuit using 2N5401 transistor
The figure shows the model motor driver circuit using the 2N5401 transistor, as when the switch closes, the current starts flowing and reaches the motor.
The higher current produced at the motor will be grounded by the 2N5401 transistor.
2N5401 transistor characteristics
The figure shows the collector saturation region characteristics of the 2N5401 transistor, the graph is plotted by the collector to emitter voltage vs base current.
The curve is plotted at different collector current values, the voltage value increases like a parabolic shape with respect to the base current.
The figure shows the DC current gain characteristics of the 2N5401 transistor, the graph is plotted with current gain vs collector current.
The characteristics are plots with two different collector to emitter voltage values, the lower voltage value had a constant gain value with respect to collector current.