2N5306 Darlington transistor

2N5306 Darlington transistor
2N5306 Darlington transistor

2N5306 specification

  • 2N5306 NPN Darlington transistor device
  • Collector to emitter voltage is 25V
  • Collector to base voltage is 25V
  • Emitter to base voltage is 12V
  • Collector current is 2A
  • Power dissipation is 625mW
  • DC current gain is 7000 to 70000hFE
  • Junction temperature & operation temperature is between -55 to +150℃
  • Collector to emitter saturation voltage (VCE (SAT)) is4V
  • Thermal resistance is 3℃/W
  • Transition frequency is 60MHz
  • High current gain
  • High output current

2N5306 Pinout

2N5306 Pinout
2N5306 Pinout
Pin Number Pin Name Description
1 Emitter  Current flows through the emitter
2 Collector Current flows through the collector
3 Base Base terminal works as the trigger for the device


2N5306 transistor package

2N5306 is an NPN Darlington transistor device that had a TO-92 device package, it is a moderate power semiconductor component.

TO-92 package is a three-terminal device that is been made of epoxy/plastic material, this will provide a better temperature capacity and lesser weight as an electronic component.

2N5306 Darlington transistor

A Darlington type transistor is a combination of two transistors connected in parallel to each other, which is by connecting the emitter terminal of one transistor to the base terminal of the second transistor.

Darlington’s two transistor combinations make such a device a high current gain semiconductor transistor.

2N5306 Darlington transistor electrical specification description

In this section we explain the electrical specifications of the 2N5306 transistor, this specs explanation is very useful for a better understanding of the device.

Voltage specs

The voltage specification of the 2N5306 Darlington transistor is a collector to emitter voltage is 25V, collector to base voltage is 25V, and emitter to base voltage is 12V.

The collector to emitter saturation voltage is 1.4V for the 2N5306 transistor, the saturation voltage of the transistor indicates the switching value.

Overall voltage values of the 2N5306 transistor are terminal voltage and saturation voltage, both these specs show it is a low voltage device.

Current specs

The collector current value of the 2N5306 transistor is 1.2A, and the current values of the device show the load capacity.

Dissipation specs

The power dissipation value of the 2N5306 transistor is 625mW, the dissipation value of the transistor shows the package capacity which is the product of voltage and current.

Current gain specs

The DC current gain of the 2N5306 NPN Darlington transistor is 7000 to 70000Hfe, the higher gain value of the transistor indicates it is an amplification device and higher power switching device.

Junction temperature/ storage temperature

 The junction temperature & operating temperature values are -55 to 150℃.

Transition frequency

The transition frequency value of the 2N5306 Darlington transistor is 60MHz, it had a lower frequency range.

2N5306 transistor DATASHEET

If you need the datasheet in pdf please click this link

2N5306 equivalent

2N5306 transistor has equivalent devices such as BC636, BC639, 2N3055, 2N3904, 2SC5200, and 2N2369, each of these transistors has the same set of electrical specification which make them equivalent devices to the 2N5306 transistor.

But we need to check and verify the specs such as voltage, PINOUT, and DC current gain values before the replacement process because each of these specs is very dangerous at the circuit level.

2N5306 vs 2N2369

In the table below, we listed the electrical specifications of both 2N5306 and 2N2369 transistors, this comparison is very useful for the replacement process.

Collector to base voltage (VCB) 25V40V
Collector to emitter voltage (VCE)25V40V
Emitter to base voltage (VEB)12V4.5V
Collector to emitter saturation voltage (VCE (SAT))1.4V0.25V
Collector current (IC)1.2A200mA
Power dissipation625mW0.36W
Junction temperature (TJ)-55 to +150°C-65 to +200°C
Thermal resistance83.3℃/W486℃/W
Gain (hFE)7000 to 70000hFE40 to 120hFE
Transition frequency60MHz500MHz

2N5306 transistor applications

  • Audio amplifier
  • Signal gain booster
  • Medium power switching
  • Inverter circuit
  • Rectifier circuit

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