
2N5133 transistor specification
- Collector to emitter voltage (VCE) is 18V
- Collector to base voltage (VCB) is 20V
- Emitter to base voltage (VEB) is 3V
- Collector current is (IC) is 05A
- Power dissipation is (Pd) is 2W
- DC current gain (hFE) is 50 to 60hFE
- Noise figure (NF) is5dB
- Transition frequency (TF) is 40MHz
- Collector to emitter saturation voltage (VCE (SAT)) is 4V
- Small signal current gain
- Junction temperature (TJ) is between 125℃
2n5133 transistor Pinout
Pin Number | Pin Name | Description |
1 | Emitter | Current flows through the emitter |
2 | Base | The base is used to trigger the transistor and control the current flow |
3 | Collector | Current flows through the collector |

2n5133 transistor package
The transistor package used at 2n5133 transistor in TO-106 is a common transistor package used for higher power devices that had the ability to handle higher temperature levels and this is why the TO-106 package is coated with metal.
2n5133 specification
The electrical specifications of the 2n5133 transistor show that it is a device having medium-range power.
In this section, we explain to you about 2n5133 transistors including almost all the electrical details.
Voltage specs
The voltage specs of 2n5133 transistor start with terminal voltages, collector to base voltage is 20V, collector to emitter voltage is 18V, and emitter to base voltage is 3V.
The terminal voltage specs show that the 2n5133 transistor is a medium to low range transistor device used for special purposes.
Current specs
The collect current specs of the 2n5133 transistor are 0.05A, it is a lower value when we compare it with other transistors.
Dissipation specs
Maximum power dissipation at 2n5133 transistor is 0.2W, for higher power applications the metal package of the transistor will protect it from overheating.
Current gain specs
The current gain at 2n5133 transistor is between 50 to 60hFE.
The current gain is an important spec for amplification and voltage regulation applications.
And the small-signal current gain value of 2n5133 is 50 to 1100hfe, most of the applications based on this transistor are at small-signal circuits.
Transition frequency specs
The transition frequency of the 2n5133 transistor is 40MHz, it is a moderate level switching device.
Junction temperature
The junction temperature of 2n5133 is 125℃.
TIP31 Transistor: datasheet
2n5133 transistor DATASHEET

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