2N5089 transistor
2N5089 specification
- 2N5089 is an NPN silicon BJT general purpose transistor device
- Collector to emitter voltage is 30V
- Collector to base voltage is 30V
- Emitter to base voltage is 5V
- Collector current is 100mA
- Power dissipation is 625mW
- DC current gain is 400 to 1200hFE
- Current gain-bandwidth transition frequency (FT) is 50MHz
- Junction temperature is between -55 to 150℃
- Thermal resistance junction to ambient is 200℃/W
- Collector to emitter saturation voltage (VCE (SAT)) is5V
- Noise figure (NF) is 2dB
- Low noise
- High gain
2N5089 Pinout
| Pin Number | Pin Name | Description |
| 1 | Collector | Current flow through the collector |
| 2 | Base | Base terminal is used to trigger the transistor device |
| 3 | Emitter | Current flows through the emitter |
2N5089 package
TO-92 is the package used at 2N5089 transistor device, which is a general purpose amplifier device.
TO-92 package is a three-terminal device made of epoxy/plastic material had specialties such as higher temperature capacity and less weight, this is the reason why these components are been used in many types of circuit applications.
2N5089 NPN transistor electrical specification description
In this section, we explain the main electrical specifications of the 2N5089 transistor. These kinds of explanations are really useful for a better understanding which is been helpful for the replacement process.
Voltage specs
The voltage specifications of the 2N5089 NPN transistor are collector to emitter voltage is 30V, collector to base voltage is 30V, and emitter to base voltage is 4.5V.
The collector to emitter saturation voltage of the 2N5089 transistor is 0.5V, it is the difference in voltage value.
The terminal voltage values and saturation voltage values of the 2N5089 transistor show that it is a low-voltage device.
Current specs
The collector current value of the 2N5089 transistor is 100mA, and the current value of the device shows the maximum load capacity.
Dissipation specs
The power dissipation of the 2N5089 transistor is 625mW, the dissipation ability of the semiconductor indicates the total value of voltage and current.
Current gain specs
The DC current gain value of the 2N5089 NPN transistor is 400 to 1200hFE, the gain value shows the amplification ability of the device. It is an amplifier transistor device.
Transition frequency
The transition frequency value of the 2N5089 is 50MHz.
Junction temperature/ storage temperature
The temperature limit of the 2N5089 transistor is -55 to +150℃.
Thermal resistance between junctions to ambient
The thermal resistance of the 2N5089 transistor is 200℃/W.
Noise figure
The noise figure value of the 2N5089 transistor is 2dB
2N5089 DATASHEET
If you need the datasheet in pdf please click this link
2N5089 equivalent
The transistor device such as 2N5088, MPS650, SS9014, BC547, BC549, MPS6532, MPS6601, and MPSW01 are the equivalent transistor of 2N5089. Each of these transistor devices has the same set of electrical specifications, so we use them as the replacement for the 2N5089 transistor.
2N5089 transistor SMD versions
The MMBT5089 (SOT-23) and MMBTH10 (SOT-23) are the SMD version transistors of the 2N5089 transistor, these transistor devices had almost the same electrical specifications.
2N5089 vs 2N3904 vs MPS650
In this table, we listed the electrical specifications of 2N5089, 2N3904, and MPS650 transistor devices, this comparison chart is helpful for a better understanding of the device for the replacement process.
| Characteristics | 2N5089 | 2N3904 | MPS650 |
|---|---|---|---|
| Collector to base voltage (VCB) | 30V | 60V | 60V |
| Collector to emitter voltage (VCE) | 30V | 40V | 40V |
| Emitter to base voltage (VEB) | 4.5V | 6V | 5V |
| Collector to emitter saturation voltage (VCE (SAT)) | 0.5V | 0.2 to 0.3V | 0.5V |
| Collector current (IC) | 100mA | 200mA | 2A |
| Power dissipation | 625mW | 625mW | 625mW |
| Junction temperature (TJ) | -55 to 150℃ | -55 to +150°C | -55 to +150℃ |
| Transition frequency (FT) | 50MHz | 300MHz | 75MHz |
| Gain (hFE) | 400 to 1200 | 20 to 300hFE | 75hFE |
| Output capacitance | - | 4pF | - |
| Noise figure | 2dB | 5dB | - |
| Rise time | - | 35ns | - |
| Package | TO-92 | TO-92 | TO-92 |
2N5089 applications
- Amplifier circuit applications
- Hi-fi audio system
- Tone control circuit
- Switching applications
- RF circuit applications
- Preamp circuit
- Voice recorder circuit
- Sensor-based applications
- Radio circuits
- Signal modulation circuit
- High AF switching
- Temperature detection systems
2N5089 NPN transistor characteristics curves
The figure shows the dc current gain characteristics of the 2N5089 NPN transistor, the graph plotted with dc current gain vs collector current.
At constant collector to emitter voltage, dc gain value is plotted at three different temperature values.
Initially, the dc current gain value starts from a particular value and keeps increasing, then it became a higher value.
The figure shows the noise voltage vs frequency characteristics of the 2N5089 transistor and the graph plots at three different collector current values.
At the starting stage noise value is higher and after frequency increases noise decreases a long way.
