2N5089 transistor

2N5089 transistor
2N5089 transistor

2N5089 specification

  • 2N5089 is an NPN silicon BJT general purpose transistor device
  • Collector to emitter voltage is 30V
  • Collector to base voltage is 30V
  • Emitter to base voltage is 5V
  • Collector current is 100mA
  • Power dissipation is 625mW
  • DC current gain is 400 to 1200hFE
  • Current gain-bandwidth transition frequency (FT) is 50MHz
  • Junction temperature is between -55 to 150℃
  • Thermal resistance junction to ambient is 200℃/W
  • Collector to emitter saturation voltage (VCE (SAT)) is5V
  • Noise figure (NF) is 2dB
  • Low noise
  • High gain

2N5089 Pinout

2N5089 Pinout
2N5089 Pinout
Pin Number Pin Name Description
1 Collector Current flow through the collector 
2 Base Base terminal is used to trigger the transistor device
3 Emitter  Current flows through the emitter


2N5089 package

TO-92 is the package used at 2N5089 transistor device, which is a general purpose amplifier device.

TO-92 package is a three-terminal device made of epoxy/plastic material had specialties such as higher temperature capacity and less weight, this is the reason why these components are been used in many types of circuit applications.

2N5089 NPN transistor electrical specification description

In this section, we explain the main electrical specifications of the 2N5089 transistor. These kinds of explanations are really useful for a better understanding which is been helpful for the replacement process.

Voltage specs

The voltage specifications of the 2N5089 NPN transistor are collector to emitter voltage is 30V, collector to base voltage is 30V, and emitter to base voltage is 4.5V.

The collector to emitter saturation voltage of the 2N5089 transistor is 0.5V, it is the difference in voltage value.

The terminal voltage values and saturation voltage values of the 2N5089 transistor show that it is a low-voltage device.

Current specs

The collector current value of the 2N5089 transistor is 100mA, and the current value of the device shows the maximum load capacity.

Dissipation specs

The power dissipation of the 2N5089 transistor is 625mW, the dissipation ability of the semiconductor indicates the total value of voltage and current.

Current gain specs

The DC current gain value of the 2N5089 NPN transistor is 400 to 1200hFE, the gain value shows the amplification ability of the device. It is an amplifier transistor device.

Transition frequency

The transition frequency value of the 2N5089 is 50MHz.

Junction temperature/ storage temperature

 The temperature limit of the 2N5089 transistor is -55 to +150℃.

Thermal resistance between junctions to ambient

The thermal resistance of the 2N5089 transistor is 200℃/W.

Noise figure

The noise figure value of the 2N5089 transistor is 2dB


If you need the datasheet in pdf please click this link

2N5089 equivalent

The transistor device such as 2N5088, MPS650, SS9014, BC547, BC549, MPS6532, MPS6601, and MPSW01 are the equivalent transistor of 2N5089. Each of these transistor devices has the same set of electrical specifications, so we use them as the replacement for the 2N5089 transistor.

2N5089 transistor SMD versions  

The MMBT5089 (SOT-23) and MMBTH10 (SOT-23) are the SMD version transistors of the 2N5089 transistor, these transistor devices had almost the same electrical specifications.

2N5089 vs 2N3904 vs MPS650

In this table, we listed the electrical specifications of 2N5089, 2N3904, and MPS650 transistor devices, this comparison chart is helpful for a better understanding of the device for the replacement process.

Collector to base voltage (VCB)30V60V60V
Collector to emitter voltage (VCE)30V40V40V
Emitter to base voltage (VEB)4.5V6V5V
Collector to emitter saturation voltage (VCE (SAT))0.5V0.2 to 0.3V0.5V
Collector current (IC)100mA200mA2A
Power dissipation625mW625mW625mW
Junction temperature (TJ)-55 to 150℃-55 to +150°C-55 to +150℃
Transition frequency (FT)  50MHz   300MHz   75MHz
Gain (hFE)400 to 120020 to 300hFE75hFE
Output capacitance-4pF-
Noise figure2dB5dB-
Rise time-35ns-
Package    TO-92    TO-92    TO-92

2N5089 applications

  • Amplifier circuit applications
  • Hi-fi audio system
  • Tone control circuit
  • Switching applications
  • RF circuit applications
  • Preamp circuit
  • Voice recorder circuit
  • Sensor-based applications
  • Radio circuits
  • Signal modulation circuit
  • High AF switching
  • Temperature detection systems

2N5089 NPN transistor characteristics curves

dc current gain characteristics of the 2N5089 NPN transistor
dc current gain characteristics of the 2N5089 NPN transistor

The figure shows the dc current gain characteristics of the 2N5089 NPN transistor, the graph plotted with dc current gain vs collector current.

At constant collector to emitter voltage, dc gain value is plotted at three different temperature values.

Initially, the dc current gain value starts from a particular value and keeps increasing, then it became a higher value.

noise voltage vs frequency characteristics of the 2N5089
noise voltage vs frequency characteristics of the 2N5089

The figure shows the noise voltage vs frequency characteristics of the 2N5089 transistor and the graph plots at three different collector current values.

At the starting stage noise value is higher and after frequency increases noise decreases a long way.

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