2N5088 transistor

2N5088 transistor
2N5088 transistor

2N5088 specification

  • 2N5088 is an NPN silicon BJT transistor device
  • Collector to emitter voltage is 30V
  • Collector to base voltage is 35V
  • Emitter to base voltage is 3V
  • Collector current is 50mA
  • Power dissipation is 625mW
  • DC current gain is 300 to 900hFE
  • Current gain-bandwidth transition frequency (FT) is 50MHz
  • Junction temperature is between -55 to 150℃
  • Thermal resistance junction to ambient is 200℃/W
  • Collector to emitter saturation voltage (VCE (SAT)) is5V
  • Noise figure (NF) is 3dB
  • Output capacitance (Cob) is 4pF
  • Low noise
  • Amplifier transistor device
  • High gain

2N5088 Pinout

2N5088 Pinout
2N5088 Pinout
Pin Number Pin Name Description
1 Emitter  Current flows through the emitter
2 Base Base terminal is used to trigger the transistor
3 Collector Current flow through the collector 

 

2N5088 package

The 2N5088 NPN transistor is an amplifier device that has a TO-92 package, it is commonly a low-power transistor.

TO-92 package is made with epoxy/plastic material and it is a three-terminal device, which has high-temperature resistance and is compacted as an electronic component.   

2N5088 NPN transistor electrical specification description

In this section, we explain the electrical specifications of the 2N5088 transistor. This description will be really useful for a better understanding and support us in the replacement process.

Voltage specs

The voltage specifications of the 2N5088 NPN transistor are collector to emitter voltage is 30      V, collector to base voltage is 35V, and emitter to base voltage is 3V.

Collector to emitter saturation voltage is 0.5V, it is the voltage value for switching the regions at the transistor.

Overall voltage values of the 2N5088 transistor show that they have more applications in small low-power circuits.

Current specs

The collector current value of the 2N5088 transistor is 50mA, this is the maximum load capacity of the device.

Dissipation specs

The power dissipation of the 2N5088 transistor is 625mW, the power dissipation is the ability of the semiconductor device.

Current gain specs

The DC current gain value of the 2N5088 transistor is 300 to 900hFE, it is the amplification capacity of the device.

Transition frequency

The bandwidth transition frequency value of the 2N5088 is 50MHz.

Junction temperature/ storage temperature

The temperature limit of the 2N5088 transistor is -55 to 150℃.

Thermal resistance between junctions to ambient

The thermal resistance of the 2N5088 transistor is 200℃/W.

Noise figure

The noise figure value of the 2N5088 transistor is 3dB

Output capacitance

The output capacitance value of the 2N5088 transistor is 4Pf

2N5088 DATASHEET

If you need the datasheet in pdf please click this link

2N5088 equivalent

The 2N5088 NPN transistor has equivalent devices such as 2N5089, 2N3904, BC108, MPSA18, KSP05, SS9014, 2N5089, MPS6602, and KSP06. Each of these transistors has almost similar electrical specs, this is why we can easily replace the place of 2N5088 transistors.

SMD version of 2N5088 transistor

The MMBT5088 (SOT-23) transistor is the SMD version of the 2N5088 device, they had high dissipation ability.

2N5088 vs 2N3904 vs 2N5089

We listed the electrical specifications of these transistors such as 2N5088, 2N3904, and 2N5089, this comparison is really useful for better understanding and also for the replacement process.

Characteristics2N50882N39042N5089
Collector to base voltage (VCB)     35V60V30V
Collector to emitter voltage (VCE)30V40V25V
Emitter to base voltage (VEB)3V6V3V
Collector to emitter saturation voltage (VCE (SAT))0.5V0.2 to 0.3V0.5V
Collector current (IC)50mA200mA50mA
Power dissipation625mW625mW625mW
Junction temperature (TJ)-55 to +150°C-55 to +150°C-55 to 150℃
Transition frequency (FT)50MHZ   300MHz50MHz
Gain (hFE)300 to 900hFE40 to 300hFE400 to 1200
Output capacitance4pF4pF-
Noise figure3dB5dB2dB
Rise time-35ns-
PackageTO-92    TO-92    TO-92

2N5088 applications

  • Amplifier circuit applications
  • General purpose switching
  • Low noise stage in audio equipment
  • Preamp circuit
  • Mic amplifier circuit
  • Sensor circuit

Characteristics curves of 2N5088 NPN transistor

dc current gain characteristics of the 2N5088 transistor
dc current gain characteristics of the 2N5088 transistor

The figure shows the dc current gain characteristics of the 2N5088 transistor, the graph is plotted with dc current gain vs collector current.

At fixed voltage value, on three different temperature values, DC current gain is been increases from a particular value towards a higher value.

noise figure characteristics of the 2n5088 transistor
noise figure characteristics of the 2n5088 transistor

The figure shows the noise figure characteristics of the 2n5088 transistor and the graph plots with noise figure vs source resistance.

At different collector current values, the noise figure dips dramatically with the increase in collector current.

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