- 2N5088 is an NPN silicon BJT transistor device
- Collector to emitter voltage is 30V
- Collector to base voltage is 35V
- Emitter to base voltage is 3V
- Collector current is 50mA
- Power dissipation is 625mW
- DC current gain is 300 to 900hFE
- Current gain-bandwidth transition frequency (FT) is 50MHz
- Junction temperature is between -55 to 150℃
- Thermal resistance junction to ambient is 200℃/W
- Collector to emitter saturation voltage (VCE (SAT)) is5V
- Noise figure (NF) is 3dB
- Output capacitance (Cob) is 4pF
- Low noise
- Amplifier transistor device
- High gain
|Current flows through the emitter
|Base terminal is used to trigger the transistor
|Current flow through the collector
The 2N5088 NPN transistor is an amplifier device that has a TO-92 package, it is commonly a low-power transistor.
TO-92 package is made with epoxy/plastic material and it is a three-terminal device, which has high-temperature resistance and is compacted as an electronic component.
2N5088 NPN transistor electrical specification description
In this section, we explain the electrical specifications of the 2N5088 transistor. This description will be really useful for a better understanding and support us in the replacement process.
The voltage specifications of the 2N5088 NPN transistor are collector to emitter voltage is 30 V, collector to base voltage is 35V, and emitter to base voltage is 3V.
Collector to emitter saturation voltage is 0.5V, it is the voltage value for switching the regions at the transistor.
Overall voltage values of the 2N5088 transistor show that they have more applications in small low-power circuits.
The collector current value of the 2N5088 transistor is 50mA, this is the maximum load capacity of the device.
The power dissipation of the 2N5088 transistor is 625mW, the power dissipation is the ability of the semiconductor device.
Current gain specs
The DC current gain value of the 2N5088 transistor is 300 to 900hFE, it is the amplification capacity of the device.
The bandwidth transition frequency value of the 2N5088 is 50MHz.
Junction temperature/ storage temperature
The temperature limit of the 2N5088 transistor is -55 to 150℃.
Thermal resistance between junctions to ambient
The thermal resistance of the 2N5088 transistor is 200℃/W.
The noise figure value of the 2N5088 transistor is 3dB
The output capacitance value of the 2N5088 transistor is 4Pf
If you need the datasheet in pdf please click this link
The 2N5088 NPN transistor has equivalent devices such as 2N5089, 2N3904, BC108, MPSA18, KSP05, SS9014, 2N5089, MPS6602, and KSP06. Each of these transistors has almost similar electrical specs, this is why we can easily replace the place of 2N5088 transistors.
SMD version of 2N5088 transistor
The MMBT5088 (SOT-23) transistor is the SMD version of the 2N5088 device, they had high dissipation ability.
2N5088 vs 2N3904 vs 2N5089
We listed the electrical specifications of these transistors such as 2N5088, 2N3904, and 2N5089, this comparison is really useful for better understanding and also for the replacement process.
|Collector to base voltage (VCB)
|Collector to emitter voltage (VCE)
|Emitter to base voltage (VEB)
|Collector to emitter saturation voltage (VCE (SAT))
|0.2 to 0.3V
|Collector current (IC)
|Junction temperature (TJ)
|-55 to +150°C
|-55 to +150°C
|-55 to 150℃
|Transition frequency (FT)
|300 to 900hFE
|40 to 300hFE
|400 to 1200
- Amplifier circuit applications
- General purpose switching
- Low noise stage in audio equipment
- Preamp circuit
- Mic amplifier circuit
- Sensor circuit
Characteristics curves of 2N5088 NPN transistor
The figure shows the dc current gain characteristics of the 2N5088 transistor, the graph is plotted with dc current gain vs collector current.
At fixed voltage value, on three different temperature values, DC current gain is been increases from a particular value towards a higher value.
The figure shows the noise figure characteristics of the 2n5088 transistor and the graph plots with noise figure vs source resistance.
At different collector current values, the noise figure dips dramatically with the increase in collector current.