2N5087 transistor specification
- 2N5087 is a general-purpose PNP silicon transistor
- Collector to emitter voltage is 50V
- Collector to base voltage is 50V
- Emitter to base voltage is 3V
- Collector current is 50mA
- Collector cutoff current (ICBO) 50nA
- Power dissipation is 625mW
- DC current gain is 250 to 800hFE
- Small signal current gain is 250 to 900hFE
- Transition frequency (FT) current gain bandwidth is 40MHz
- Junction temperature is between –55 to 150℃
- Collector to emitter saturation voltage (VCE (SAT)) is3V
- Thermal resistance, junction to case (RɵJc) 3℃/W
- Noise figure is 2dB
2N5087 transistor Pinout
|The emitter is the input of the transistor.
|The base is used to trigger the transistor
|The collector is the output of the transistor
2N5087 transistor package
The 2N5087 transistor had a package of TO-92, it is a general-purpose device package.
The TO-92 package is made using epoxy and plastic material, the usage of these materials makes this transistor more compact and low cost.
2N5087 transistor specification description
In this section we try to explain the electrical specification and application description of the 2n5087 transistor, this is useful for application notes.
The terminal voltage specs of the 2n5087 transistor are, collector to emitter voltage is 50v, collector to base voltage is 50v, and emitter to base voltage is 3v, the voltage specs shows that it is a general-purpose transistor.
The collector current value for the 2n5087 transistor is 50mA, it is the maximum load capacity of this transistor device.
The power dissipation value for the 2n5087 transistor is 625Mw, it is the most common transistor dissipation value.
Current gain specs
The current gain for the 2n5087 transistor is 250 to 800Hfe, this is a moderate value to make an amplifier circuit.
The transition frequency is 40MHz, the current gain bandwidth value of the transistor decides the maximum frequency of the transistor.
The junction temperature of -55 to +150℃, the temperature capacity of the 2n5087 transistor.
2N5087 transistor DATASHEET
If you need the datasheet in pdf please click this link
2N5087 transistor equivalent
The transistor devices such as 2sa1016g, 2sa1025, 2sa1083, 2sa1114, ksp55, and mpsa55 are the equivalent transistors for 2n5087.
The electrical and physical specifications of each of these transistors are the same, so we can use all of these transistors as equivalent transistors.
2N5087 vs KSP55 vs 2SA1025
The below table listed the electrical specifications of each of these transistors, the comparison will help you to know the electrical variations.
Characteristics 2N5087 KSP55 2SA1025
Collector to base voltage (VCB) 50V -60V -60V
Collector to emitter voltage (VCE) 50V -60V -60V
Emitter to base voltage (VEB) 3V -4V -5V
Collector current (IC) 50mA -0.5A -0.1A
Power dissipation 625mW 625mW 0.4W
Junction temperature (TJ) -55 to 150°C 150°C 150°C
Transition frequency (FT) 40MHZ 50MHZ 90MHz
Noise (N) 2dB - -
Gain (hFE) 250 to 900hFE 50hFE 250 to 800hFE
Package TO-92 TO-92 TO-92
The comparison table shows that each of the transistors in this list had almost the same electrical specifications, so we can use each other as the replacement.
From this list, the 2n5087 transistor is a powerful transistor, which had more applications at the amplifier and switching circuits.
2N5087 transistor characteristics
The figure shows the noise characteristics of the 2n5087 transistor, both of these graphs show the noise voltage and noise current characteristics.
Both the noise voltage and noise current graphs show that the noise figure increases and becomes constant at a point.
The figure shows the DC current gain characteristics of 2n5087 transistor, the graph is plotted with dc current vs collector current.
The dc current gain will increase towards a point and decreases at the end, the collector current increases towards a limit.
Applications of 2N5087 transistor
- General-purpose applications
- Switching applications
- AF amplifier circuit