2N4403 transistor
2N4403 transistor electrical specification
- 2N4403 is a PNP general purpose transistor device
- Collector to emitter voltage is 40V
- Collector to base voltage is 40V
- Emitter to base voltage is 5V
- Collector current is 600mA
- Power dissipation is 625mW
- DC current gain is 20 to 300hFE
- Small signal current gain is 60 to 500hFE
- Current gain-bandwidth (FT) is 200MHz
- Junction temperature is between -55 to 150℃
- Collector to emitter saturation voltage (VCE (SAT)) is4V to 0.75V
- Thermal resistance, junction case is 3℃/W
- Rise time (tr) is 20ns
2N4403 transistor Pinout
| Pin Number | Pin Name | Description |
| 1 | Emitter | Current flows through the emitter |
| 2 | Base | The base is the trigger for the transistor |
| 3 | Collector | Current flows through the collector |
2N4403 transistor package
The 2n4403 transistor had the component package TO-92, these packages are mainly used for general-purpose devices.
The TO-92 package is made with a mixture of material epoxy and plastic, the usage of these materials makes the transistor package more heat resistant and compact as a component.
Marking the case
This transistor component had a 2n4403 marking on its case
2N4403 transistor electrical specification description
In this description we explain the electrical specifications of the 2n4403 transistor, this also leads to explaining some of the applications of the 2n4403 transistor.
Voltage specs
The voltage specs of 2n4403 are collector to emitter and collector to base voltage is 40V and emitter to base voltage is 5V, it is the voltage value mostly had for a general-purpose transistor device.
Collector to emitter saturation voltage is 0.4 to 0.75v
Current specs
Collector current value is 600mA, it is the overall load capacity of the transistor in all circuit applications.
Dissipation specs
The dissipation of a 2n4403 transistor device is 625Mw, this is the power dissipation value for a general-purpose transistor.
Current gain specs
The current gain value is very important for a transistor in many applications, 20 to 300Hfe.
Small signal DC current gain value is 60 to 500hFE
Current gain-bandwidth transition frequency
The bandwidth transition frequency value of the 2N4403 transistor is 200MHz, it is the frequency range of the transistor.
Junction temperature
With the junction temperature of -55 to 150℃, the heat capacity of the transistor is mainly dependent on the case.
Thermal resistance
The thermal resistance of the 2n4403 transistor case is 83.3℃/W
2N4403 transistor DATASHEET
If you need the datasheet in pdf please click this link
2N4403 transistor equivalent
The 2N4403 transistor had equivalents such as 2SA708, BC527, BC880, 2N2907, MP5750, PN2907, and MPS4355.
These transistors are the perfect examples of 2n4403 transistor equivalents, this is because the electrical specifications of each transistor are identical to 2N4403.
But before the replacement process, we need to check and verify the PINOUT details of the transistor and replace the component at the circuit.
2N4403 transistor complementary
The 2N4403 PNP transistor had complementary transistors such as 2N4400 and 2N4401 NPN transistors.
SMD versions of 2N4403 transistor
The surface mount versions of the 2N4403 transistor are 2SA1520 (SOT-23), PMBT4403 (SOT-23), and MMST4403 (SOT-323), the electrical specs of these SMDs are the same as the 2N4403 normal transistor.
2N4403 vs 2N3906 vs 2N2907
In the table, we try to compare the electrical specifications of each transistor such as 2N4403, 2N3906, and 2N2907.
| Characteristics | 2N4403 | 2N3906 | 2N2907 |
|---|---|---|---|
| Collector to base voltage (VCB) | 40V | 40V | 60V |
| Collector to emitter voltage (VCE) | 40V | 40V | 60V |
| Emitter to base voltage (VEB) | 5V | 5V | 5V |
| Collector to emitter saturation voltage (VCE (SAT)) | 0.4V to 0.75V | 0.25V to 0.4V | -0.4V to-1.6V |
| Collector current (IC) | 600mA | 200mA | 600mA |
| Power dissipation | 625mW | 625mW | 625mW |
| Junction temperature (TJ) | -55 to +150°C | -55 to +150°C | -55 to +150°C |
| Transition frequency (FT) | 200MHZ | 250MHZ | 200MHZ |
| Gain (hFE) | 20 to 300hFE | 30 to 300hFE | 50 to 300hFE |
| Noise figure (NF) | - | 4dB | - |
| Rise time (tr) | 20ns | 35ns | 40ns |
| Package | TO-92 | TO-92 | TO-92 |
The voltage specs of each transistor are identical and apt for a general-purpose application.
The rest of the electrical specifications of 2n4403, 2n3906, and 2n2907 transistor is the same, so we can use these transistors as the replacement for 2n4403.
2N4403 transistor applications
- Simple switching applications
- Relay driver apps
- Audio amplifier
- Signal amplifier
- Microphone preamp
- Sensor circuits
- Lighting system applications
2N4403 transistor characteristics
The figure shows the DC current gain characteristics of the 2N4403 transistor, the graph is plotted with normalized current gain vs collector current.
For the reference, a fixed collector to emitter voltage is taken, such as a low value and a higher value.
At a lower voltage value, the temperature rises and the gain value reaches the higher limit and slightly drops at the end.
The figure shows the collector to emitter saturation voltage characteristics of the 2n4403 transistor, the graph is plotted with the collector to emitter voltage vs base current.
Latch switch circuit using 2n4403 and 2n4401 complementary pair
The figure shows the latch switch circuit using 2n4403 and 2n4401 transistors as the complementary pair with the relay and diode.
The latch circuit had the function of switching which is by a stay at the circuit closed position even after the trigger pulse is gone.
This state of staying at a closed position for an indefinite time until the power is reset or some external signal is applied, the working of the Latch switch circuit is very much similar to SCR.
