2N4402 transistor
2N4402 specification
- 2N4402 is a PNP general purpose silicon BJT transistor device
- Collector to emitter voltage is 40V
- Collector to base voltage is 40V
- Emitter to base voltage is 5V
- Collector current is 600mA
- Power dissipation is 625mW
- DC current gain is 20 to 150hFE
- Junction temperature is between -55 to 150℃
- Thermal resistance junction to ambient is 200℃/W
- Collector to emitter saturation voltage (VCE (SAT)) is75 to 1.30V
- Output capacitance (Cob) is 5pF
- Rise time 20ns
2N4402 transistor Pinout
| Pin Number | Pin Name | Description |
| 1 | Emitter | Current flow through the collector |
| 2 | Base | Base terminal is used to trigger the transistor |
| 3 | Collector | Current flows through the emitter |
2N4402 PNP transistor package
The 2N4402 PNP transistor has a TO-92 package, it is mainly used for general purpose devices.
TO-92 transistor package is made with epoxy/plastic material which will provide higher temperature capacity and compactness for the device.
2N4402 PNP transistor electrical specification description
In this section, we explain the electrical specifications of the 2N4402 transistor device, this explanation is really helpful for better understanding.
Voltage specs
The voltage specs of the 2N4402 transistor are collector to emitter voltage is 40V, collector to base voltage is 40V and emitter to base voltage is 5V, this is the terminal voltage specs of the device.
The collector to emitter saturation voltage value of the 2N4402 transistor is -0.75V to -1.30V, this voltage is always less than the base voltage value.
The specifications of the 2N4402 transistor show that it is a low-voltage semiconductor device having more voltage-based applications.
Current specs
The collector current is 600mA for the 2N4402 transistor, and the current value of the transistor shows the load capacity of the device.
Dissipation specs
The power dissipation of the 2N4402 transistor is 625mW, it is the exchange of voltage and current at the device.
Current gain specs
The current gain value of the 2N4402 transistor is 20 to 150hFE, at circuit applications like amplifiers and regulator use this ability.
Junction temperature/ storage temperature
The storage temperature of the 2N4402 transistor is -55 to 150℃.
Thermal resistance between junctions to ambient
The thermal resistance of the 2N4402 transistor is 200℃/W, this is the maximum temperature limit.
Output capacitance
The output capacitance value of the 2N4402 PNP transistor is 8.5Pf
2N4402 transistor DATASHEET
If you need the datasheet in pdf please click this link
2N4402 equivalent
The 2N4402 PNP transistor device has an equivalent device such as BC559, BC327, 2N4403, 2SA708, BC528, NTE159, and KSA708, the electrical specifications of these transistors are the same.
Before the replacement process, we need to check and verify the PINOUT specs, because it is very important at the circuit level.
2N4402 complementary
The 2N4402 PNP transistor has a complementary pair NPN transistor 2N4400, each of them has the same and opposite electrical specifications, so we can easily use it in push-pull circuit applications.
2N4402 SMD transistors
The 2N4402 PNP transistors have SMD version devices such as 2SA1518 (SOT-23), 2SA1519 (SOT-23), and 2SA1521 (SOT-23), these SMD equivalents of 2N4402 transistors have low dissipation values.
2N4402 vs 2SA708 vs BC528
We listed the electrical specifications of 2N4402, 2SA708, and BC528 transistor devices.
| Characteristics | 2N4402 | 2SA708 | BC528 |
|---|---|---|---|
| Collector to base voltage (VCB) | -40V | -80V | -60V |
| Collector to emitter voltage (VCE) | -40V | -60V | -60V |
| Emitter to base voltage (VEB) | -5V | -8V | -6V |
| Collector to emitter saturation voltage (VCE (SAT)) | -0.75 to -1.30V | -0.7V | -0.7 to -1.5V |
| Collector current (IC) | -600mA | -700mA | -1A |
| Power dissipation | 625mW | 800mW | 625mW |
| Junction temperature (TJ) | -55 to +150°C | -55 to +150°C | -55 to +150℃ |
| Transition frequency (FT) | - | 50MHz | 100MHz |
| Gain (hFE) | 20 to 150hFE | 40 to 400hFE | 40 to 400hFE |
| Output capacitance | 8.5pF | 13pF | 15pF |
| Rise time | 20ns | - | - |
| Package | TO-92 | TO-92 | TO-92 |
2N4402 PNP transistor applications
- Low power switching applications
- Microphone preamp circuit
- Relay driver applications
Characteristics curves of 2N4402 PNP transistor
The figure shows the collector to emitter saturation voltage characteristics of the 2N4402 transistor, the graph is plotted with the collector to emitter saturation voltage vs collector current.
The graph plots at three different temperature variations, from the curve we get an inverted parabolic curve with respect to collector current.
The figure shows the current gain characteristics of the 2N4402 transistor, the graph plotted with current gain vs collector current.
At constant collector to an emitter voltage value, the gain value increases from a higher value and becomes constant then it falls at the end.
