2N4400 NPN transistor
2n4400 specification
- 2N4400 is an NPN general purpose silicon BJT transistor device
- Collector to emitter voltage is 40V
- Collector to base voltage is 60V
- Emitter to base voltage is 6V
- Collector current is 600mA
- Power dissipation is 625mW
- DC current gain is 20 to 150hFE
- Current gain-bandwidth transition frequency (FT) is 200MHz
- Junction temperature is between -55 to 150℃
- Thermal resistance junction to ambient is 200℃/W
- Collector to emitter saturation voltage (VCE (SAT)) is4 to 0.75V
- Output capacitance (Cob) is 5pF
- Rise time 20ns
2N4400 Pinout
| Pin Number | Pin Name | Description |
| 1 | Emitter | Current flows through the emitter |
| 2 | Base | Base terminal is used to trigger the transistor |
| 3 | Collector | Current flow through the collector |
2N4400 transistor package
The 2N4400 NPN transistor is a general-purpose device which having a TO-92 device package.
TO-92 package is a three-terminal device that is made of epoxy/plastic material for better temperature capacity and also provides lite weight for the package.
The compactness of the TO-92 package-based 2N4400 transistor makes more general-purpose circuit applications.
2N4400 NPN transistor electrical specification description
In this section, we explain the electrical specifications of the 2N4400 NPN general purpose transistor, this explanation will provide us a basic idea about this particular device.
Voltage specs
The voltage specs of this 2N4400 transistor are a collector to emitter voltage is 40V, collector to base voltage is 60V, and emitter to base voltage is 6V.
The collector to emitter saturation voltage is 0.4 to 0.75V, it is the saturation voltage value of collector and emitter terminals which is usually lesser than the base voltage.
Overall voltage specifications of the 2N4400 transistor show that they had a low voltage value, so naturally, it had more general-purpose applications.
Current specs
The collector current value of the 2N4400 transistor is 600mA, this is the maximum load capacity of the device.
Dissipation specs
The power dissipation of the 2N4400 transistor is 625mW, the TO-92 package provides them with this kind of dissipation ability.
Current gain specs
The current gain value of the 2N4400 transistor is 20 to 150hFE, the gain is mainly considered in amplification applications.
Transition frequency
The transition frequency value of the 2N4400 is 200MHz, it is the frequency range of the device.
Junction temperature/ storage temperature
The temperature limit of the 2N4400 transistor is -55 to 150℃.
Thermal resistance between junctions to ambient
The thermal resistance of the 2N4400 transistor is 200℃/W.
Output capacitance
The output capacitance value of the 2N4400 transistor is 6.5Pf
Rise time
The rise time of the 2N4400 transistor is 20ns, it is the switching speed of the transistor.
2N4400 NPN transistor DATASHEET
If you need the datasheet in pdf please click this link
2N4400 transistor equivalent
The 2N4400 general purpose transistor has equivalent devices such as BC547, BC548, BC549, BC488, 2SC1008, BC557, and ZTX451, each of these transistor devices have a similar set of electrical specifications.
We need to check and verify the voltage specifications and PINOUT details of the transistor we replace at the place of 2N4400, this is very important at the circuit level.
2N4400 complementary transistor
The 2N4402 and 2N4403 PNP transistors are the complementary pair of 2N4400 NPN transistor
SMD transistor version
The MMBT4400 (SOT-23) is the SMD version transistor of the 2N4400 transistor, most of the important specifications are the same.
2N4400 vs NTE123AP
We listed the electrical specifications of 2N4400 and NTE123AP transistors, this comparison will help us to know more about these devices.
| Characteristics | 2N4400 | NTE123AP |
|---|---|---|
| Collector to base voltage (VCB) | 60V | 60V |
| Collector to emitter voltage (VCE) | 40V | 40V |
| Emitter to base voltage (VEB) | 6V | 6V |
| Collector to emitter saturation voltage (VCE (SAT)) | 0.4 to 0.75V | 0.4 to 0.75V |
| Collector current (IC) | 600mA | 600mA |
| Power dissipation | 625mW | 625mW |
| Junction temperature (TJ) | -55 to +150°C | -55 to +150°C |
| Transition frequency (FT) | 200MHZ | 250MHz |
| Gain (hFE) | 20 to 150hFE | 20 to 300hFE |
| Output capacitance | 6.5pF | 6.5pF |
| Rise time | 20ns | 20ns |
| Package | TO-92 | TO-92 |
The electrical specifications of these 2N4400 and NTE123AP are the same, but the specs such as transition frequency and DC current gain value of these transistors are different.
2N4400 transistor applications
- Microphone preamp circuit
- Relay driver circuit
- Signal amplifier circuit
- Lighting applications
Characteristics curves of 2N4400 NPN transistor
The figure shows the DC current gain characteristics of the 2N4400 transistor and the graph plots with dc current gain vs collector current.
At different temperature value and constant collector to emitter voltage values, the DC current gain increases from a higher value and become constant then drops at the end.
The figure shows the noise transition frequency characteristics of the 2N4400 transistor, and the graph plots with transition frequency vs collector current.
At the constant voltage and temperature values, the frequency range increases from a particular limit towards a higher value and dips at the end with respect to the collector current value.
