2N3906 transistor electrical specification
- 2N3906 is a PNP general-purpose epitaxial planer silicon transistor device
- Collector to emitter voltage is –40V
- Collector to base voltage is –40V
- The emitter to base voltage is –5V
- Collector current is –200mA
- Power dissipation is 625mW
- DC current gain is 50 to 300hFE
- Junction temperature is between -55 to 150℃
- Thermal resistance junction to ambient is 200℃/W
- Collector to emitter saturation voltage (VCE (SAT)) is25 to 0.4V
- Output capacitance (Cob) is 5pF
- Rise time 35ns
- Transition frequency (TF) is 250MHz
- Noise figure (NF) is 4dB
- Small signal application transistor
|Current flows through the emitter
|Base terminal is used to trigger the device
|Current flow through the collector
2N3906 is a small signal application transistor device having a TO-92 transistor package, it is a general-purpose application device.
TO-92 is a small-sized three-terminal semiconductor device that is made of epoxy/plastic material for higher temperature capacity.
2N3906 electrical specification description/applications
Here in this section, we explained the electrical specifications of the 2N3906 transistor, this explanation is really useful for a better understanding of the device and helpful in the replacement process.
The terminal voltage specs of the 2N3906 transistor are collector to emitter is -40V, collector to the base is -40V and emitter to the base is -5V, the voltage specs show it is a low power device.
The collector-to-emitter saturation voltage is -0.25V to -0.4V, it is the triggering voltage of the transistor.
The collector current value of the 2N3906 transistor is -200mA, applications like load drivers and switching circuits need the load capacity of the transistor.
The dissipation ability of the 2N3906 transistor is 625mW, this value is calculated from the product of the voltage and current values of the transistor.
Current gain specs
The DC current gain value of the 2N3906 transistor is 30 to 300Hfe, these values are important for amplifier applications.
Junction temperature/ storage temperature
The maximum temperature capacity of the 2N3906 transistor is -55 to +150℃.
Thermal resistance between junctions to ambient
The thermal resistance value of the 2N3906 transistor is 200℃/W, this value is mainly dependent on the device package.
The transition frequency value of the 2N3906 transistor is 250MHz, it is very useful at the circuit level.
The noise figure value of the 2N3906 transistor is 4Db, this value is important for audio-related applications.
The output capacitance value of the 2N3906 transistor is 4.5pF
If you need the datasheet in pdf please click this link
2N3906 transistor equivalent
2N3906 small signal transistor has equivalent devices such as 2N4403, MPSA13, MPSA55, BC557, BC558, 2N2906, C945, ZTX555 and MPSA92, each of them almost have the same set of electrical specifications.
2N3906 transistors had applications such as converters and inverters, so the specifications such as voltage, current and frequency values are needed to check and verify for each device.
The 2N3906 PNP transistor device has complementary pair of 2N3904 NPN transistors, both of them have the same and opposite electrical specifications.
2N3906 SMD equivalent
MMBT3906 (SOT-23) & (SOT-323) SMD transistors are the equivalent devices of 2N3906 transistors, almost all the electrical specifications are the same for each device.
2N3906 vs 2N4403 vs MPSA13
Here in the table below we listed the electrical specifications of 2N3906 vs 2N4403 vs MPSA13 transistors, this specs comparison is really useful for a better understanding.
|Collector to base voltage (VCB)
|Collector to emitter voltage (VCE)
|Emitter to base voltage (VEB)
|Collector to emitter saturation voltage (VCE (SAT))
|-0.25 to -0.4V
|-0.4 to 0.75V
|Collector current (IC)
|Junction temperature (TJ)
|-55 to +150°C
|-55 to +150°C
|-55 to +150℃
|Thermal resistance, junction to ambient
|Transition frequency (FT)
|50 to 300hFE
|30 to 300hFE
|5000 to 10000hFE
- Suitable for Tv and home appliances
- Small load switch transistor with high gain and low saturation voltage
- Inverter circuits
- Converter circuits
- Used to make siren circuits
- Used to make lamp flasher circuit
- Used for Darlington pair
Characteristics curves of 2N3906
The figure shows the common emitter static characteristics of the 2N3906 transistor, and the graph plots with collector current vs collector to emitter voltage.
At each base current value, the curve produces a different value, so the curve looks like a flat value and then at the end, it becomes strike increases with respect to the collector to emitter voltage.
The figure shows the current gain characteristics of the 2N3906 transistor, and the graph plots with DC current gain vs collector current.
At constant voltage values, the DC current gain value starts from a higher value and then dips into a lower value with respect to the collector current value.
2N3906 & 2N3904 based LED flasher circuit
The figure shows the two complementary transistor-based LED flasher circuits, the circuit consists of 2N3904 & 2N3906 transistors, 1N914 diode, and a few passive components.
The LED flasher working is mainly based on the push-pull action of both transistors 2N3904 & 2N3906 transistors.
2N3906 LED switching circuit
The figure shows the LED switching circuit using a 2n3906 transistor