2N3866 transistor specification
- 2N3866 is an NPN silicon HIGH-frequency transistor device
- Collector to emitter voltage is 30V
- Collector to base voltage is 55V
- Emitter to base voltage is 5V
- Collector current is 400mA
- Output power is 1W
- DC current gain is 5 to 200hFE
- Junction temperature & operating temperature is between -55 to +150℃
- Collector to emitter saturation voltage (VCE (SAT)) is 1V
- Transition frequency (TF) is 500 to 800MHz
- Output capacitance is 8 to 3.5pF
- Low power transistor
- RF & microwave discrete
- VHF/UHF transistor
- 800MHz current gain bandwidth
|Current flows through the emitter
|Base terminal is used to trigger the transistor device
|Current flows through the collector and it is connected with the case of the package.
2N3866 HIGH-frequency transistor device has a TO-39 METAL CAN package, the outer covering is made with the metal cover which acts as the heat sink of this device.
TO-39 is a three-terminal metal-covered device package, 2N3866 transistors are mainly used for amplifier applications, so compactness for the component is important.
2N3866 transistor electrical specification description & application note:
In this section we explain the electrical specifications of the 2N3866 transistor, this explanation is very useful for the replacement process and circuit-making process, which is very useful for a better understanding of the device.
The voltage specifications of the 2N3866 transistor are a collector-to-emitter voltage is 30V, a collector-to-base voltage is 55V, and emitter to base voltage is 3.5V, which is the terminal voltage value.
The collector-to-emitter saturation voltage value of the 2N3866 transistor is 1V, it is the switching value of the transistor.
The voltage specs show it is a medium voltage device that had more audio-based applications.
The collector current value of the 2N3866 transistor is 400Ma, and the current value of the transistor indicates the load capacity.
Current gain specs
The DC current gain value of the 2N3866 transistor is 5 to 200MHz, this value is important for amplifier and oscillator applications.
The 2N3866 transistor had a transition frequency value between 500 to 800MHz, it is a very important spec for some application circuits.
The output capacitance value of the 2N3866 transistor is 2.8 to 3.5pf
The output power value of the 2N3866 transistor is 1W
If you need the datasheet in pdf please click this link
2N3866 transistor have equivalent devices such as 2N4427, TA2658, 2N5000 and BFW47, each of them have same set of electrical specifications.
For amplifier and frequency-based applications, circuits have important specs such as voltage, current and frequency values, so we need to check and verify those specs at these transistors before the replacement process.
2N3866 vs 2N4427
In the table below we list and compare the electrical specifications of 2N3866 and 2N4427 transistors, this comparison is very useful for circuit-making and replacement processes.
|Collector to base voltage (VCB)
|Collector to emitter voltage (VCE)
|Emitter to base voltage (VEB)
|Collector to emitter saturation voltage (VCE (SAT))
|Collector current (IC)
|Junction temperature (TJ)
|-55 to +150°C
|-65 to +150°C
|2.8 to 3.5pF
|500 to 800MHz
|5 to 200hFE
|10 to 200hFE
Characteristics curves of 2N3866 transistor
The figure shows the output power vs input power characteristics of the 2N3866 transistor, the graph plots output power vs input power.
At a constant frequency value, the curve plots at three different collector-to-emitter voltage values.
The power increases from zero to a higher value and after a certain point, the power becomes constant.
- VHF/UHF equivalent applications
- Pre driver applications
- Output stage amplifier circuit
- Oscillator circuit applications
- Frequency multiplier circuit applications