2N3819 JFET
2N3819 JFET specification
- 2N3819 is a general-purpose N-channel depletion JFET device
- Drain to gate voltage (VDG) is 25V
- Gate to source voltage (VGS) is –25V
- Gate to source cutoff voltage (VGS (OFF)) is 8V
- Gate to source voltage (VGS) is -0.5V to -7.5V
- Drain gate forward current (IGF) is 10mA
- Power dissipation is (PD) is 350mW
- Zero gate voltage drain current (IDSS) is 2 to 20mA
- Input capacitance (Ciss) is 8pF
- Junction temperature (TJ) is between -65 to 150℃
- Thermal resistance of ambient is 357℃/W
- Cutoff frequency is 700MHz
- RF amplifier device
- Wideband high gain
- Very high system sensitivity
- High-quality amplification
- High-speed switching operation
- High-end low-level signal amplifier
- Medium to high frequency
- Low noise circuits
N3819 JFET PINOUT
| Pin Number | Pin Name | Description |
| 1 | Drain | The drain terminal is the current inlet of the JFET device |
| 2 | Gate | The gate is the trigger terminal for the JFET device |
| 3 | Source | In the source, terminal current flows out from the JFET |
2N3819 JFET package
The 2N3819 JFET transistor had the general-purpose package TO-92, it is the most compact and also higher heat resistance package.
The TO-92 is made with a mixture of epoxy/plastic material which is used for heat resistance property.
Another advantage of the TO-92 package is the compactness and less weight, this is possible by the size and shape of the transistor package.
2N3819 JFET electrical specification and application description
In this section, we try to explain the electrical specifications of the 2N3819 JFET device, these explanations will be really helpful for the replacement process at the circuits.
Voltage specs
The voltage specs of the 2N3819 JFET device are a drain to gate voltage is 25V, the gate to source voltage is -25V, and the gate to source voltage is -0.5 to -7.5V.
The gate to source cutoff voltage of 2N3819 JFET is 8V.
The voltage specifications of 2N3819 JFET shows that it is a general-purpose device.
Current specs
The drain current value of 2N3819 JFET is 50mA and the gate forward current value is 10mA, it is the load capacity of the component at the circuit.
Zero gates voltage drain current
The zero gate voltage drain current value is 2 to 20nA, it is the current value under the special condition where the gate voltage is zero.
Dissipation specs
The power dissipation is 350mW for the 2n3819 JFET device, it is the lowest value for a semiconductor device.
Junction temperature
The junction temperature of 2N3819 JFET is -55 to +150℃.
Input capacitance
The capacitance value offered by the 2N3819 JFET device at the input is 8pF
Thermal resistance
The thermal resistance of the ambient 2N3819 JEFT device is 357℃/W
Cutoff frequency
The cutoff frequency value of the 2N3819 JFET device is 700MHz, it is the maximum limit frequency of the device.
2N3819 JFET DATASHEET
If you need the datasheet in pdf please click this link
2N3819 JFET EQUIVALENT
The JFET devices such as 2N4416, NTE312, 2N5640, and 2SK162 are the equivalent devices of 2N3819.
The electrical specifications of all of these JFET devices are almost the same, so we can use them as the equivalent at the circuits.
The 2N3819 JFET is a medium power device which had many applications in amplification-based circuits.
Before the replacement process, we need to check and verify the PINOUT details, because any difference in the network will badly affect the component.
2N3819 vs MPF102 vs 2N5457
In the table below we list and compare the electrical specifications of 2N3819, MPF102, and 2N5457 JFET devices.
The specification study will help us to know more about all of these devices and it will help in the replacement process.
| Characteristics | 2N3819 | MPF102 | 2N5457 |
|---|---|---|---|
| Drain to gate voltage (VDG) | 25V | 25V | 25V |
| Gate to source cutoff voltage (VGS(OFF)) | -8V | -8V | -0.5 to -6.0V |
| Gate to source voltage (VGS) | -25V | -25V | -25V |
| Gate forward current (IG) | 50mA | 10mA | 10mA |
| Zero gate voltage drain current (IDSS) | 2 to 20mA | 2 to 20mA | 1 to 5mA |
| Power dissipation (PD) | 350mW | 350mW | 310mW |
| Junction temperature (TJ) | -65 to 150°C | -65 to 150°C | -65 to 150°C |
| Input capacitance (Ciss) | 8pF | 7pF | 4.5pF |
| Package | TO-92 | TO-92 | TO-92 |
The electrical specifications of these JFET devices show that they all had almost the same specs, so we use them as the replacement for circuits.
Characteristics curves of 2N3819 JFET
The figures show the output characteristics of 2N3819 JFET, the graph is plotted with drain current vs drain to source voltage.
At the different gate to source voltage ranges, the JFET device produces different drain current values with respect to drain to source voltage.
The figure shows the voltage gain characteristics of the 2N3819 JFET device, the graph is plotted with voltage gain vs drain current.
Initial stages the voltage gain had a higher value and eventually it will decrease towards the lowest value with respect to the fixed gate to source cutoff voltage and drain current.
Applications of 2N3819 JFET
- VHF amplifier system
- UHF amplifier system
- RF module
- Tone control
- Oscillator circuits
- Low noise amplifier circuits
- High-speed switching circuits
- Very low capacitance switching circuits
- Mixer circuits
