2N3771 HIGH POWER transistor
2N3771 HIGH POWER NPN transistor electrical specification
- 2N3771 is a HIGH POWER NPN silicon BJT transistor device
- Collector to emitter voltage VCEO is 40V
- Collector to emitter voltage VCEX is 50V
- Collector to base voltage is 50V
- Emitter to base voltage is 5V
- Collector current is 30A
- Base current is 5A
- Power dissipation is 150W
- DC current gain is 50 to 60hFE
- Current gain-bandwidth transition frequency (FT) is 2MHz
- Junction temperature/operating temperature is between -65 to 200℃
- Thermal resistance junction to the case is 17℃/W
- Collector to emitter saturation voltage (VCE (SAT)) is 2 to 4V
- Audio amplifier device
- Linear amplifier device
2N3771 HIGH POWER transistor Pinout
|Pin Number||Pin Name||Description|
|1||Base||The base terminal is used to trigger the transistor|
|2||Emitter||Current flow through the collector|
|3||Collector||Current flows through the emitter|
2N3771 HIGH POWER transistor package
The 2N3771 HIGH POWER transistor has a TO-3 package, it is a high power package.
TO-3 package is made for a semiconductor device that has the ability to withstand high power, this is the reason why it is made of metal.
TO-3 transistor package is a two-terminal device and the body itself works as a heat sink and third terminal at circuits.
2N3771 HIGH POWER transistor electrical specification description
In this section, we try to explain the electrical specifications of the 2N3771 POWER transistor.
The voltage specs of the 2n3771 transistor are collector to emitter voltage VCEO is 40V and VCEX is 50V, collector to base voltage is 50V, and emitter to base voltage is 5V. The collector to emitter saturation voltage is 2 to 4V, it is the switching voltage of the transistor.
The voltage specifications of the 2N3771 HIGH POWER transistor show that it is a high-voltage device having large-scale applications.
The collector current value of the 2N3771 HIGH POWER transistor is 30A and the base current is 7.5A.
The current value of the 2N3771 transistor shows that it is a high-capacity load transistor device, which has high current applications.
The power dissipation of the 2N3771 NPN HIGH power transistor is 150W, the dissipation ability of this device mainly depends on the device package.
Current gain specs
The DC current gain value of the 2N3771 HIGH POWER transistor is 5 to 60hFE, they had less ability at current gain production.
The bandwidth transition frequency value of the 2N3771 transistor is 0.2MHz.
Junction temperature/ storage temperature
The operating and junction temperature of the 2N3771 HIGH power transistor is -65 to 200℃.
Thermal resistance between junctions to case
The thermal resistance between junctions to the case of the 2N3771 transistor is 1.17℃/W.
2N3771 HIGH POWER NPN transistor DATASHEET
If you need the datasheet in pdf please click this link
2N3771 NPN transistor equivalent
The 2N3771 transistor has equivalent transistor devices such as 2N3771G, 2N5302, 2N5686, NTE181, 2SK9134, and MJE4002, each of these transistors has a similar set of electrical specifications.
Before the replacement process, we need to check and verify the specifications such as PINOUT details and current specs, this is because it is very dangerous at the circuit level.
2N3771 vs 2N3055
We listed and compare the electrical specifications of the 2N3771 and 2N3055 transistors, this comparison table helps us to know more about this device.
|Collector to base voltage (VCB)||50V||100V|
|Collector to emitter voltage (VCEO)||40V||60V|
|Collector to emitter voltage (VCEX or VCER)||50V||70V|
|Emitter to base voltage (VEB)||5V||7V|
|Collector to emitter saturation voltage (VCE (SAT))||2 to 4V||1.1 to 3V|
|Collector current (IC)||30A||15A|
|Junction temperature (TJ)||-65 to +200°C||-65 to +200°C|
|Transition frequency (FT)||0.2MHZ||2.5MHz|
|Gain (hFE)||5 to 60hFE||5 to 70hFE|
Both the 2N3771 and 2N3055 HIGH power transistors have almost similar sets of electrical specifications.
2N3771 HIGH POWER transistor applications
- Series pass regulator
- Inductive switching applications
- Power amplifier circuit
- Small amplifier
- Power supply circuit
- High current switching circuit
Characteristics curves of 2N3771 HIGH POWER transistor
The figure shows the dc current gain characteristics of the 2N3771 HIGH POWER transistor, the graph plots with dc current gain vs collector current.
At a constant collector to emitter voltage, at the gain curve, three temperature ranges are been plotted.
We can see at the characteristics curve, DC current gain value increases from a higher value to a lower value with respect to collector current.
The figure shows the active safe operating area characteristics of the 2N3771 HIGH power transistor, the graph plots with collector current vs collector to emitter voltage.