2N3645 transistor electrical specification
- 2N3645 is a silicon general-purpose PNP transistor device
- Collector to emitter voltage (VCE) is -60V
- Emitter to base voltage (VEB) is -5V
- Collector to base voltage (VCB) is -60V
- Collector current is -500mA
- Power dissipation is 700mW
- DC current gain is 20 to 300hFE
- Transition frequency (FT) is 20MHz
- Junction temperature is between -65 to 150℃
- Thermal resistance, junction to the case is 143℃/W
- Collector to emitter saturation voltage (VCE (SAT)) is -0.4 to -1.0V
- Output capacitance is 8pF
- Turn on is 40ns
|Current flows through the emitter terminal
|Base terminal is used to trigger the device
|Current flow through the collector
2N3645 transistor package
2N3645 general-purpose transistor device has a TO-92 package, it is a three-terminal device made with epoxy/plastic material for higher temperature capacity and compactness.
The shape and size of the TO-92 package support the transistor for small-scale circuit making, this is possible because it is a through-hole device.
2N3645 transistor electrical specification description/applications
Here in this section, we explain the electrical specifications of the 2N3645 transistor, this detailed explanation will help us know more about the device for circuit application.
The terminal voltage specifications for the 2N3645 transistor are collector to emitter voltage is -60V, collector to base voltage is -60V and emitter to base voltage is -5V.
The collector-to-emitter saturation voltage is -0.4 to -1.0V, which is the switching voltage of the device.
The voltage specs of the 2N3645 transistor indicate it is a medium voltage general-purpose application transistor.
The collector current value of the 2N3645 transistor is 500mA, which is the maximum load capacity of the device.
The current specs of the 2N3645 transistor indicate they are been used for switching and power handling applications.
The power dissipation ability of the 2N3645 transistor is 700mW, it is the value calculated by the product of voltage and current.
DC current gain
The DC current gain value of the 2N3645 transistor is 20 to 300hFE, this value is important in amplification and generator systems.
The transition frequency value of the 2N3645 transistor is 20MHz.
Junction temperature/ storage temperature
The maximum temperature value of the 2N3645 transistor is -55 to +150℃.
The thermal resistance of the junction to the case is 143℃/W.
The output capacitance of the 2N3645 transistor is 8pF, this value is important for some applications.
2N3645 transistor DATASHEET
If you need the datasheet in pdf please click this link
2N3645 transistor equivalent
2N3645 general-purpose transistor device has many equivalent transistors such as 2N4354, 2N4356, 2N30, 2N3011, 2N3009, and 2N3012, each of these transistors has the same set of electrical specifications.
We need to check and verify specs such as voltage, current, frequency, and DC current gain values of each transistor because it is important for general purpose and signal generator applications.
2N3645 SMD equivalent
The SMD transistors FMMTA55 (SOT-23), KST55 (SOT-23), and MMBT3904 (SOT-23) are the SMD equivalent of 2N3645 transistors, they had different specs on power dissipation values.
2N3645 vs 2N4354
Here in the table below we listed the electrical specs of 2N3645 vs 2N4354 transistors, this comparison is really useful for a better understanding of the device.
|Collector to emitter voltage
|Collector to base voltage (VCB)
|Emitter to base voltage (VEB)
|Collector to emitter saturation voltage (VCE (SAT))
|-0.4 to 1.0V
|0.15 to 0.5V
|Collector current (IC)
|Junction temperature (TJ)
|-55 to +150°C
|-65 to +150°C
|Transition frequency (FT)
|20 to 300hFE
|50 to 500hFE
2N3645 transistor applications
- General purpose amplifier
- Switching applications
- RF applications
- Digital communication system
- Measurement devices
- Control systems
- Voltage regulation
- Power supply circuit generation system
- Oscillator circuit