2N3645 transistor

2N3645 transistor
2N3645 transistor

2N3645 transistor electrical specification

  • 2N3645 is a silicon general-purpose PNP transistor device
  • Collector to emitter voltage (VCE) is -60V
  • Emitter to base voltage (VEB) is -5V
  • Collector to base voltage (VCB) is -60V
  • Collector current is -500mA
  • Power dissipation is 700mW
  • DC current gain is 20 to 300hFE
  • Transition frequency (FT) is 20MHz
  • Junction temperature is between -65 to 150℃
  • Thermal resistance, junction to the case is 143℃/W
  • Collector to emitter saturation voltage (VCE (SAT)) is -0.4 to -1.0V
  • Output capacitance is 8pF
  • Turn on is 40ns

2N3645 Pinout

2N3645 Pinout
2N3645 Pinout
Pin Number Pin Name Description
1 Emitter  Current flows through the emitter terminal
2 Base Base terminal is used to trigger the device
3 Collector Current flow through the collector 


2N3645 transistor package

2N3645 general-purpose transistor device has a TO-92 package, it is a three-terminal device made with epoxy/plastic material for higher temperature capacity and compactness.

The shape and size of the TO-92 package support the transistor for small-scale circuit making, this is possible because it is a through-hole device.

2N3645 transistor electrical specification description/applications

Here in this section, we explain the electrical specifications of the 2N3645 transistor, this detailed explanation will help us know more about the device for circuit application.

Voltage specs

The terminal voltage specifications for the 2N3645 transistor are collector to emitter voltage is -60V, collector to base voltage is -60V and emitter to base voltage is -5V.

The collector-to-emitter saturation voltage is -0.4 to -1.0V, which is the switching voltage of the device.

The voltage specs of the 2N3645 transistor indicate it is a medium voltage general-purpose application transistor.

Current specs

The collector current value of the 2N3645 transistor is 500mA, which is the maximum load capacity of the device.

The current specs of the 2N3645 transistor indicate they are been used for switching and power handling applications.

Dissipation specs

The power dissipation ability of the 2N3645 transistor is 700mW, it is the value calculated by the product of voltage and current.

DC current gain

The DC current gain value of the 2N3645 transistor is 20 to 300hFE, this value is important in amplification and generator systems.

Transition frequency

The transition frequency value of the 2N3645 transistor is 20MHz.

Junction temperature/ storage temperature

 The maximum temperature value of the 2N3645 transistor is -55 to +150℃.

Thermal resistance

The thermal resistance of the junction to the case is 143℃/W.

Output capacitance

The output capacitance of the 2N3645 transistor is 8pF, this value is important for some applications.

2N3645 transistor DATASHEET

If you need the datasheet in pdf please click this link

2N3645 transistor equivalent

2N3645 general-purpose transistor device has many equivalent transistors such as 2N4354, 2N4356, 2N30, 2N3011, 2N3009, and 2N3012, each of these transistors has the same set of electrical specifications.

We need to check and verify specs such as voltage, current, frequency, and DC current gain values of each transistor because it is important for general purpose and signal generator applications.

2N3645 SMD equivalent

The SMD transistors FMMTA55 (SOT-23), KST55 (SOT-23), and MMBT3904 (SOT-23) are the SMD equivalent of 2N3645 transistors, they had different specs on power dissipation values.

2N3645 vs 2N4354

Here in the table below we listed the electrical specs of 2N3645 vs 2N4354 transistors, this comparison is really useful for a better understanding of the device.

Collector to emitter voltage-60V-60V
Collector to base voltage (VCB)-60V-60V
Emitter to base voltage (VEB)-5V-5V
Collector to emitter saturation voltage (VCE (SAT))-0.4 to 1.0V0.15 to 0.5V
Collector current (IC)-500mA-1A
Power dissipation700mW0.35W
Junction temperature (TJ)-55 to +150°C-65 to +150°C
Thermal resistance143℃/W-
Transition frequency (FT)20MHz500MHz
Gain (hFE)20 to 300hFE50 to 500hFE
Output capacitance8pF30pF

2N3645 transistor applications

  • General purpose amplifier
  • Switching applications
  • RF applications
  • Digital communication system
  • Measurement devices
  • Control systems
  • Voltage regulation
  • Power supply circuit generation system
  • Oscillator circuit

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