2N3053 transistor

2N3053 transistor
2N3053 transistor

2N3053 transistor electrical specification

  • 2N3053 is a general-purpose NPN power transistor device
  • Collector to emitter voltage is 40V
  • Collector to base voltage is 60V
  • Emitter to base voltage is 5V
  • Collector current is 7A
  • Power dissipation is 5W
  • DC current gain is 50 to 250hFE
  • Current gain-bandwidth transition frequency (FT) is 100MHz
  • Output capacitance (Cob) is 15pf
  • Junction temperature is between -65 to 200℃
  • Thermal resistance, junction to the case is 35℃/W
  • Collector to emitter saturation voltage (VCE (SAT)) is3 to 1.4V

2N3053 transistor Pinout

2N3053 transistor Pinout
2N3053 transistor Pinout
Pin Number Pin Name Description
1 Emitter Current flow through the collector 
2 Base Base terminal is the trigger for the transistor
3 Collector Current flow through the emitter


2N3053 transistor package

The 2N3053 transistor had the TO-39 package, it is a metal can power transistor package.

The TO-39 package is made with metal and forms like a can, this is why they had a higher temperature capacity.

Another specialty of the TO-39 package is the terminal marking, a little marking is at the package to start counting collector, base, and emitter.

2N3053 transistor electrical specification description/application

In this section, we try to explain the electrical specifications of the 2N3053 transistor device.

These descriptions are really helpful for a better understanding of the component and we can use these pieces of information for the replacement process.

Voltage specs

The terminal voltage specs of the 2N3053 transistor are collector to emitter voltage is 40V, collector to base voltage is 60V, and emitter to base voltage is 5V, these are the voltage specifications.

The collector to emitter saturation voltage is 0.3 to 1.4V, it is the voltage value lesser than the base voltage.

The voltage specifications of the 2N3053 transistor show that it is a much capable of general-purpose applications.

Current specs

The collector current value of the 2N3053 transistor is 0.7A, it is the maximum load capacity of this transistor device.

The current values of the transistor show that the 2N3053 transistor has low power switching applications.

Dissipation specs

The power dissipation of the 2N3053 transistor is 5W, and the dissipation capacity of this device is high due to the metal Can package.

Current gain specs

The current gain value of the 2N3053 transistor is 50 to 250hFE, the current gain value shows the amplification capacity of the device.

This is why the 2N3053 transistor had many low-power simple amplifier applications.

Transition frequency

The bandwidth transition frequency value of the 2N3053 transistor is 100MHz, it is the frequency range of the transistor.

Junction temperature

 With the junction temperature of -65 to 200℃, the heat capacity of the transistor is mainly dependent on the case.

The TO-39 transistor package had a higher range of temperature capability.

Thermal resistance

The thermal resistance of junction to case value is 35℃/W

Input capacitance

The input capacitance value of the 2N3053 transistor is 15pF

2n2222 transistor

2N3053 transistor DATASHEET

If you need the datasheet in pdf please click this link

2N3053 transistor equivalent

The transistor devices such as BC108, SL100, 2N2219, BC140, BC441, and 2N5321 are the equivalent transistors of 2N3053.

The electrical specifications of these transistors are the same as 2N3053, so we easily replace them, but the package of the device is different.

We need to check and verify the PINOUT and package of the device, before the replacement of the 2N3053 transistor.

2N3053 vs 2N3055 vs BC140

In the table, we listed and compare the electrical specifications of 2N3053, 2N3055, and BC140 transistors.

The electrical specs comparison is really helpful for the understanding of these transistors and it is helpful for the replacement process.

Collector to base voltage (VCB)     60V100V80V
Collector to emitter voltage (VCE)40V60V40V
Emitter to base voltage (VEB)5V7V7V
Collector to emitter saturation voltage (VCE (SAT))0.3 to 1.4V1.1 to 3V1V
Collector current (IC)0.7A15A1A
Power dissipation5W115W0.8W
Junction temperature (TJ)-65 to +200°C-65 to +200°C-65 to +200°C
Transition frequency (FT)100MHz2.5MHz    50MHz
Gain (hFE)50 to 250hFE5 to 70hFE30 to 250hFE
Input capacitance15pF-25pF

2N3053 transistor applications

  • LED Flasher
  • LED dimmer
  • Switching applications
  • Preamp for power amplifiers
  • High-frequency switching
  • Modulator and demodulator for RF frequency circuits

Simple amplifier circuit using 2N3053 transistor

Simple amplifier circuit using 2N3053 transistor
Simple amplifier circuit using 2N3053 transistor

The figure shows the two-stage amplifier circuit using a 2N3053 transistor, as when the input signal reaches the first transistor, they produce an amplified signal and passes towards the second amplifier.

A combined operation of both 2N3053 transistors makes a moderately amplified signal towards the earphone.

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