2N2907 transistor
2N2907 transistor electrical specification
- 2N2907 is a PNP bipolar junction transistor device
- Collector to emitter voltage is 40V
- Collector to base voltage is 60V
- Emitter to base voltage is 5V
- Collector current is 600mA
- Power dissipation is 400mW
- DC current gain is 100 to 300hFE
- Current gain-bandwidth (FT) is 200MHz
- Junction temperature is between -65 to 200℃
- Collector to emitter saturation voltage (VCE (SAT)) is -400mV
- Thermal resistance, junction case is 146K/W
- Rise time (tr) is 35ns
2N2907 transistor Pinout
| Pin Number | Pin Name | Description |
| 1 | Emitter | Current flows through the emitter |
| 2 | Base | The base is the trigger for the transistor |
| 3 | Collector | Current flows through the collector |
The 2n2907 transistor had the pinout configuration of EBC, it is a general type of pinout mostly used in transistor devices.
2N2907 transistor package
The 2N2907 transistor had the device package TO-18, commonly used at some of the transistors.
TO-18 package outer cover is made with metal, but it is very compact same as the TO-92 package.
Due to the TO-18 package, the 2N2907 transistor has higher heat resistant capability, and the outer metal covering acts as a heat sink.
Marking the case
This transistor component had a 2n2907 marking on its case
2N2907 transistor electrical specification description/ application
In this section, we try to explain the electrical specifications of the 2N2907 transistor, this descript is very useful to understand more about this transistor and its applications.
Voltage specs
The terminal voltage specs are collector to emitter voltage is 40V, collector to base voltage is 60V, and emitter to base voltage is 5V, the voltage specs show that the 2N2907 transistor is a general-purpose transistor mainly used for low power applications.
The collector to emitter saturation voltage is -400mV, it is a low collector saturation voltage for a transistor device.
Current specs
The collector current value is 600Ma, the current value indicates the load capacity of the transistor.
Dissipation specs
The power dissipation of the 2N2907 transistor is 400mW, it is the dropping voltage of the device.
Current gain specs
The current gain value of the 2N2907 transistor is 100 to 300hFE, this is why these transistors are used for low power amplifiers and switching applications.
Current gain-bandwidth transition frequency
The bandwidth transition frequency value of the 2N2907 transistor is 200MHz, it is the frequency range of the transistor.
Junction temperature
With the junction temperature of -65 to 200℃, the heat capacity of the transistor is mainly dependent on the case.
The TO-18 transistor package had a higher temperature capability than other general-purpose transistor packages.
Thermal resistance
The thermal resistance of the 2n2907 transistor case is 146℃/W
Rise time
The rise time is 35ns for 2N2907 transistor
2N2907 transistor DATASHEET
If you need the datasheet in pdf please click this link
2N2907 transistor equivalent
The transistor devices such as 2N2907A, NTE159M, 2N4401, 2N2905, 2N2906, 2N5763, 2N2904, 2N3907, BC637, and S9014 are the 2N2907 transistor equivalents.
The electrical specifications of these transistors are almost the same as the 2N2907 transistor, so we can use them as the equivalent circuit and replace them.
The PINOUT details of these transistors are identical to the 2n2907 transistor, we need to check and verify before the replacement process.
2N2907 transistor complementary
The 2N2907 PNP transistor has the perfect NPN complementary 2N2222 transistor, at many circuits, these pairs are been used.
SMD versions of 2N2907 transistor
The SMT versions for the 2N2907 transistor are 2SB710A (SOT-23), FMMT2907 (SOT-23), and KTN2907U (SOT-323).
2N2907 vs 2N2222 vs 2N2904
In the table we try to compare the electrical specifications of 2N2907, 2N2222, and 2N2904, this comparison is very helpful for the replacement process.
| Characteristics | 2N2907 | 2N2222 (NPN) | 2N2904 |
|---|---|---|---|
| Collector to base voltage (VCB) | 60V | 60V | 60V |
| Collector to emitter voltage (VCE) | 40V | 30V | 40V |
| Emitter to base voltage (VEB) | 5V | 5V | 5V |
| Collector to emitter saturation voltage (VCE (SAT)) | -400mV | 0.4V to 1.6V | 0.4V to 1.6V |
| Collector current (IC) | 600mA | 800mA | 0.6A |
| Power dissipation | 400mW | 500mW | 0.8W |
| Junction temperature (TJ) | -65 to +200°C | -65 to +200°C | -65 to +200°C |
| Transition frequency (FT) | 200MHZ | 250MHZ | 200MHZ |
| Gain (hFE) | 100 to 300hFE | 30 to 300hFE | 20 to 120hFE |
| Rise time (tr) | 35ns | 25ns | 45ns |
| Package | TO-18 | TO-18 | TO-39 |
2N2907 transistor applications
- Low power amplifier circuits
- Switching applications
- LED flasher circuits
- Analog and linear amplifier
- Darlington pair
- RF circuits
- Sensor circuits
2N2907 transistor characteristics
The figure shows the DC current gain characteristics of the 2N2907 transistor, the graph is plotted with current gain vs collector current.
The dc current gain characteristics of the 2N2907 transistor are been starts with the lowest value and increased at a rate, at the end the current gain value will drop towards a low value with respect to collector current.
The figure shows the collector saturation region characteristics of the 2N2907 transistor, the graph is plotted with the collector to emitter voltage vs base current.
The graph is plotted in different collector current values, the collector to emitter voltage value increases towards the positive value with respect to base current.
Dual LED flasher circuit using 2N2907 transistor
The figure shows the flasher circuit using a 2N2907 transistor, the working of this circuit is the same as the multi-vibrator circuit.
As when the circuit closes, the base of one transistor gets triggered and one LED flashes at a time.
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