2n2905 transistor specification
- 2n2905 is a high-speed switching PNP transistor
- Collector to emitter voltage is -40V
- Collector to base voltage is -60V
- Emitter to base voltage is –5V
- Collector current is -600mA
- Power dissipation is 600mW
- DC current gain is 100 to 300hFE
- Gain Bandwidth (FT) is 200MHz
- Junction temperature is between 200℃
- Collector to emitter saturation voltage (VCE (SAT)) is -400mV
- Rise time (tr) 35ns
- High-speed switching device
2N2905 transistor Pinout
|Pin Number||Pin Name||Description|
|1||Emitter||Current flows through the emitter terminal|
|2||Base||The base is used to trigger the transistor|
|3||Collector||Current flows through the collector|
2N2905 transistor package
The transistor package used for 2n2905 is TO-39, it is a metal package made for higher heat withstanding capability.
2N2905 transistor electrical specification description
The 2n2905 is a multi-purpose transistor device used for different larger scale and small scale applications, in this section we explain its electrical specifications with an application description.
The voltage specs of this transistor are collector to base voltage is -60v, collector to emitter voltage is -40v, and emitter to base voltage is -5v, it is a higher voltage spec for a PNP transistor.
The collector current value is -600mA, the current value shows the load capacity apt for industrial drivers.
The power dissipation of the 2n2905 transistor is 600mW, higher dissipation power of this transistor is due to the transistor package.
Current gain specs
The current gain value is between 30 to 300Hfe, the lower current gain is because they are been mainly used for switching and driver applications.
The transition frequency value is 200MHz, this value is important for switching applications.
The junction temperature of -55 to 200℃, this is the most common temperature value for a medium power transistor device.
2n2905 transistor DATASHEET
If you need the datasheet in pdf please click this link
2n2905 transistor equivalent
The transistors such as 2n2905a, 2n4405, 2sa303, 2n2904, 2n5151, and BSS61 are the transistor equivalent for the 2n2905 transistor.
2n2905 vs 2n2907 vs 2N5151
The table will explain the electrical comparison between 2n2905 vs 2n2907 vs 2n5151 transistors.
Characteristics 2n2905 2n2907 2n5151
Collector to base voltage (VCB) -60V 60V 100V
Collector to emitter voltage (VCE) -40V 40V 80V
Emitter to base voltage (VEB) -5V 5V 5.5V
Collector to emitter saturation voltage (VCE (SAT)) -400mV 0.4 to -1.6v 0.75 to 1.5v
Collector current (IC) -600mA 600mA 2A
Power dissipation 600mW 400mW 1W
Junction temperature (TJ) 200°C 150°C 200°C
Transition frequency (FT) 200MHZ 200MHZ -
Rise time (tr) 35ns 40ns -
Gain (hFE) 30 to 300hFE 100 to 300hFE 20 to 200hFE
Package TO-39 TO-92/TO-18 TO-18
The electrical specification of 2n2905 and 2n2907 are almost the same, but the 2n5151 transistor had different electrical values.
In this list 2n5151 had the higher value, it is considered a powerful transistor device.
2n2905 transistor characteristics
The figure shows the current gain characteristics of the 2n2905 transistor, the graph is plotted with current gain vs collector current.
At a fixed voltage value, the transistor is start with a low current gain value and the collector current is increases.
The figure shows the switching characteristics of the 2n2905 transistor, the graph is plotted with switching speed vs collector current.