2N2219 transistor
2N2219 transistor electrical specification
- 2N2219 is an NPN switching silicon transistor device
- Collector to emitter voltage is 30V
- Collector to base voltage is 60V
- Emitter to base voltage is 5V
- Collector current is 800mA
- Power dissipation is 800mW
- DC current gain is 30 to 300hFE
- Junction temperature & operating temperature is between -65 to 200℃
- Thermal resistance is 59℃/W
- Collector to emitter saturation voltage (VCE (SAT)) is4V to 1.6V
- Transition frequency (TF) is 250MHz
- Turn ON time (ton) is 35ns
- Turn OFF time (toff) is 300ns
- Output capacitance is 8pF
2N2219 transistor Pinout
| Pin Number | Pin Name | Description |
| 1 | Emitter | Current flows through the emitter |
| 2 | Base | Base terminal is used to trigger the transistor device |
| 3 | Collector | Current flows through the collector and it is connected with the case of the package. |
2N2219 transistor package
The 2N2219 transistor has TO-39 and TO-5 transistor packages, both of the packages are similar and powerful. The TO-39/TO-5 package is made with metal CAN, which is very good at heat resistance and power dissipation.
The 2N2219 is a medium power NPN transistor device mainly used for amplifier circuits and driver applications.
2N2219 transistor electrical specification description
In this section, we try to explain the electrical specifications of the 2N2219 transistor device.
Voltage specs
The terminal voltage specs of the collector to base voltage are 60V, collector to emitter voltage is 30V, and emitter to base voltage is 5V, they had low voltage values.
The collector to emitter saturation voltage is 0.4V to 1.6V, it is the voltage value of the saturation region.
Overall voltage specifications of the 2N2219 transistor show that it is a general-purpose low-power device.
Current specs
The collector current value of the 2N2219 transistor is 800mA, and the load capacity of this transistor is under 800mA.
The current specifications of the 2N2219 transistor show that it is a device used for driver applications.
Dissipation specs
The power dissipation of the 2N2219 transistor is 800mW, the dissipation capability will mainly depend on the device package.
Current gain specs
The current gain value of the 2N2219 transistor is 30 to 300hFE, the gain value of the transistor shows the amplification factor.
Transition frequency
The transition frequency value of the 2N2219 transistor is 250MHz
Junction temperature
The junction temperature of -65 to 200℃, which is a general-purpose transistor temperature value of capacity.
Thermal resistance
The thermal resistance of the 2N2219 transistor case is 59℃/W
Output capacitance
The output capacitance of the 2N2219 transistor is 8Pf
Turn-ON/OFF time
The turn ON time value is 35ns and the turn OFF time value is 300ns.
2N2219 transistor DATASHEET
If you need the datasheet in pdf please click this link
2N2219 transistor equivalent
The transistor devices such as 2N5551, 2N2218, NTE123, 2N3107, 2N3109, and 2N4403 are the transistor equivalent of 2N2219. The electrical specifications of these transistors are almost the same as 2N2219.
The 2N2219 is an NPN switching transistor which having TO-39 packaging, most of the above devices have the same physical specs as 2N2219. So we can use them as the equivalent at the circuits.
Complementary transistor of 2N2219
The complementary pair transistor of 2N2219 is the 2N2905 PNP transistor.
SMD version transistor of 2N2219
The SMD transistors such as BCW65 (SOT-23), FMMT2222 (SOT-23), KTN2N2222S (SOT-23), PMBT2222 (SOT-23), and KTN2222U (SOT-323) are the SMD equivalent of 2N2219 transistor.
2N2219 vs 2N2222
In the table below, we list the electrical specification comparison of 2N2219 vs 2N2222 transistor devices.
| Characteristics | 2N2219 | 2N2222 |
|---|---|---|
| Collector to base voltage (VCB) | 60V | 60V |
| Collector to emitter voltage (VCE) | 30V | 30V |
| Emitter to base voltage (VEB) | 5V | 5V |
| Collector to emitter saturation voltage (VCE (SAT)) | 0.4V to 1.6V | 400mV to 1.6V |
| Collector current (IC) | 800mA | 800mA |
| Power dissipation | 800mW | 500mW |
| Junction temperature (TJ) | -65 to +200°C | -65 to +200°C |
| Thermal resistance | 59℃/W | 145K/W |
| Output capacitance | 8pF | - |
| Transition frequency | 250MHz | 250MHz |
| Gain (hFE) | 30 to 300hFE | 75 to 300hFE |
| Noise figure | - | 4dB |
| Turn OFF time | 200ns | 250ns |
| Package | TO-39/ TO-5 | TO-18 |
The electrical comparison table of 2N2219 vs 2N2222 states that both the transistor devices have identical specifications.
2N2219 transistor applications
- Relay driver
- LED driver
- Amplifier modules
- Signal amplifier circuits
- Darlington pair
- Small signal general-purpose circuits
- RF circuits
