2N1613 transistor
2N1613 specification
- 2N1613 is an NPN silicon BJT planer epitaxial transistor device
- Collector to emitter voltage is 50V
- Collector to base voltage is 75V
- Emitter to base voltage is 7V
- Collector current is 500mA
- Power dissipation is 800mW
- DC current gain is 20 to 120hFE
- Transition frequency (FT) is 80MHz
- Junction temperature is between -65 to 200℃
- Thermal resistance junction to ambient is 7℃/W
- Collector to emitter saturation voltage (VCE (SAT)) is3 to 1.5V
- Noise figure (NF) is 12dB
- Output capacitance is 10 to 25pF
- Input capacitance is 50 to 80pF
2N1613 Pinout
| Pin Number | Pin Name | Description |
| 1 | Emitter | Current flows through the emitter |
| 2 | Base | Base terminal triggers the device |
| 3 | Collector | Current flow through the collector |
2N1613 package
2N1613 NPN silicon transistor has a TO-39 device package, it is a general-purpose semiconductor package.
TO-39 package is a three-terminal device made up of metal, this gives the package more temperature capacity and compactness.
TO-39 metal can package is covered with a metallic surface, this will act as the heat sink.
2N1613 transistor electrical specification description
In this section, we explain the important electrical specifications of the 2N1613 transistor, this explanation is very useful for the replacement process and gives up an idea about the 2N1613 transistor device.
Voltage specs
The voltage specs of the 2N1613 transistor are a collector-to-emitter voltage is 50V, a collector-to-base voltage is 75V, and emitter to base voltage is 7V, which is the terminal voltage value.
The collector-to-emitter saturation value of the 2N1613 transistor is 0.3 to 1.5V, the region switching value of the 2N1613 transistor.
The terminal voltage and switching voltage values show that it is a general-purpose device having moderate voltage values.
Current specs
The collector current value of the 2N1613 transistor is 500mA, the current value indicates the maximum load capacity of the device.
Dissipation specs
The power dissipation of the 2N1613 transistor is 800mW, it is the product of voltage and current value.
Current gain specs
The DC current gain value of the 2N1613 transistor is 20 to 120hFE, it is the amplification ability of the device.
Transition frequency
The transition frequency value of the 2N1613 transistor is 80MHz.
Junction temperature/ storage temperature
The temperature limit of the 2N1613 transistor is -55 to +200℃.
Thermal resistance between junctions to ambient
The thermal resistance of the 2N1613 transistor is 218.7℃/W.
Noise figure
The noise figure value of the 2N1613 transistor is 12dB
Output capacitance
The output capacitance of the 2N1613 transistor is 10 to 25Pf.
2N1613 DATASHEET
If you need the datasheet in pdf please click this link
2N1613 equivalent
The transistors such as 2N1893, 2N3020, 2N3498, 2N4031, 2SC510, 2N5681, BC301, BC141, and 2N5336 are the equivalent of 2N1613 transistors, each of these has the same set of electrical specifications.
At the circuit level, we need to check and verify the PINOUT details and voltage values of the replacement device.
2N1613 vs 2N1893 vs BC301
In this table, we listed the electrical specifications of three transistors 2N1613, 2N1893, and BC301, this comparison is useful for a better understanding.
| Characteristics | 2N1613 | 2N1893 | BC301 |
| Collector to base voltage (VCB) | 75V | 120V | 90V |
| Collector to emitter voltage (VCE) | 50V | 100V | 60V |
| Emitter to base voltage (VEB) | 7V | 7V | 7V |
| Collector to emitter saturation voltage (VCE (SAT)) | 0.3 to 1.5V | 1.2V | 0.1 to 0.5V |
| Collector current (IC) | 500mA | 500mA | 1A |
| Power dissipation | 800mW | 3W | 6W |
| Junction temperature (TJ) | -65 to 200℃ | -65 to 200°C | -55 to +175℃ |
| Transition frequency (FT) | 80MHz | 50MHz | 120MHz |
| Gain (hFE) | 20 to 120hFE | 20 to 120hFE | 20 to 240hFE |
| Output capacitance | 10 to 25pF | 15pF | 10Pf |
| Noise figure | 12dB | – | – |
| Package | TO-39 | TO-39 | TO-39 |
2N51613 transistor applications
- Small signal general-purpose switching applications
- Amplifier circuit
- High-performance amplifier
- Oscillator circuit
Power supply circuit of the amplifier using 2N1613
The figure shows the power supply circuit for a 30Watt amplifier, the circuit is based on three 2n1613 transistors and a 2n3055 transistor.
The operation is mainly dependent on the three-transistor device which acts as the high gain arrangement also known as the Darlington pair and T4 acts as the controller transistor.
