2N1613 transistor

2N1613 transistor
2N1613 transistor

2N1613 specification

  • 2N1613 is an NPN silicon BJT planer epitaxial transistor device
  • Collector to emitter voltage is 50V
  • Collector to base voltage is 75V
  • Emitter to base voltage is 7V
  • Collector current is 500mA
  • Power dissipation is 800mW
  • DC current gain is 20 to 120hFE
  • Transition frequency (FT) is 80MHz
  • Junction temperature is between -65 to 200℃
  • Thermal resistance junction to ambient is 7℃/W
  • Collector to emitter saturation voltage (VCE (SAT)) is3 to 1.5V
  • Noise figure (NF) is 12dB
  • Output capacitance is 10 to 25pF
  • Input capacitance is 50 to 80pF

2N1613 Pinout

2N1613 Pinout
2N1613 Pinout
Pin Number Pin Name Description
1 Emitter  Current flows through the emitter
2 Base Base terminal triggers the device
3 Collector Current flow through the collector 


2N1613 package

2N1613 NPN silicon transistor has a TO-39 device package, it is a general-purpose semiconductor package.

TO-39 package is a three-terminal device made up of metal, this gives the package more temperature capacity and compactness.

TO-39 metal can package is covered with a metallic surface, this will act as the heat sink.   

2N1613 transistor electrical specification description

In this section, we explain the important electrical specifications of the 2N1613 transistor, this explanation is very useful for the replacement process and gives up an idea about the 2N1613 transistor device.

Voltage specs

The voltage specs of the 2N1613 transistor are a collector-to-emitter voltage is 50V, a collector-to-base voltage is 75V, and emitter to base voltage is 7V, which is the terminal voltage value.

The collector-to-emitter saturation value of the 2N1613 transistor is 0.3 to 1.5V, the region switching value of the 2N1613 transistor.

The terminal voltage and switching voltage values show that it is a general-purpose device having moderate voltage values.

Current specs

The collector current value of the 2N1613 transistor is 500mA, the current value indicates the maximum load capacity of the device.

Dissipation specs

The power dissipation of the 2N1613 transistor is 800mW, it is the product of voltage and current value.

Current gain specs

The DC current gain value of the 2N1613 transistor is 20 to 120hFE, it is the amplification ability of the device.

Transition frequency

The transition frequency value of the 2N1613 transistor is 80MHz.

Junction temperature/ storage temperature

 The temperature limit of the 2N1613 transistor is -55 to +200℃.

Thermal resistance between junctions to ambient

The thermal resistance of the 2N1613 transistor is 218.7℃/W.

Noise figure

The noise figure value of the 2N1613 transistor is 12dB

Output capacitance

The output capacitance of the 2N1613 transistor is 10 to 25Pf.


If you need the datasheet in pdf please click this link

2N1613 equivalent

The transistors such as 2N1893, 2N3020, 2N3498, 2N4031, 2SC510, 2N5681, BC301, BC141, and 2N5336 are the equivalent of 2N1613 transistors, each of these has the same set of electrical specifications.

At the circuit level, we need to check and verify the PINOUT details and voltage values of the replacement device.

2N1613 vs 2N1893 vs BC301

In this table, we listed the electrical specifications of three transistors 2N1613, 2N1893, and BC301, this comparison is useful for a better understanding.

Characteristics 2N1613 2N1893 BC301
Collector to base voltage (VCB) 75V 120V 90V
Collector to emitter voltage (VCE) 50V 100V 60V
Emitter to base voltage (VEB) 7V 7V 7V
Collector to emitter saturation voltage (VCE (SAT)) 0.3 to 1.5V 1.2V 0.1 to 0.5V
Collector current (IC) 500mA 500mA 1A
Power dissipation 800mW 3W 6W
Junction temperature (TJ) -65 to 200℃ -65 to 200°C -55 to +175℃
Transition frequency (FT)   80MHz   50MHz    120MHz
Gain (hFE) 20 to 120hFE 20 to 120hFE 20 to 240hFE
Output capacitance 10 to 25pF 15pF 10Pf
Noise figure 12dB
Package     TO-39     TO-39     TO-39


2N51613 transistor applications

  • Small signal general-purpose switching applications
  • Amplifier circuit
  • High-performance amplifier
  • Oscillator circuit

Power supply circuit of the amplifier using 2N1613

Power supply circuit of the amplifier using 2N1613
Power supply circuit of the amplifier using 2N1613

The figure shows the power supply circuit for a 30Watt amplifier, the circuit is based on three 2n1613 transistors and a 2n3055 transistor.

The operation is mainly dependent on the three-transistor device which acts as the high gain arrangement also known as the Darlington pair and T4 acts as the controller transistor.

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