2655/2SC2655 transistor electrical specification
- 2655 is a silicon NPN epitaxial type transistor device
- Collector to emitter voltage is 50V
- Collector to base voltage is 50V
- Emitter to base voltage is 5V
- Collector current is 2A
- Maximum base current is 5A
- Power dissipation is 900mW
- DC current gain is 40 to 240hFE
- Current gain-bandwidth (FT) is 100MHz
- Junction temperature is between -55 to 150℃
- Collector to emitter saturation voltage (VCE (SAT)) is5V
- Turn ON time is 1us
- Low saturation voltage
- High collector power dissipation
- High-speed switching
2655 transistor Pinout
|Current flows through the emitter
|Current flow through the collector
|The base terminal is used to trigger the device
2655/ 2SC2655 transistor package
The 2655/2SC2655 transistor had the TO-92MOD and TO-92NL packages, it is commonly used for general-purpose electronic devices.
TO-92MOD/TO-92NL package is the same as the TO-92 package, which is made with epoxy/plastic material for higher thermal capacity and compactness.
The 2655 transistor is a device mainly used for low-power applications, this is why they had the TO-92 package.
Marking the case
The 2SC2655 transistor component had a “C2655” or “2655” marking on its case
2655/ 2SC2655 transistor electrical specification description/ application
In this section we try to include the 2655 transistor electrical specifications, this explanation is really helpful for a better understanding of this device and it is useful for the replacement process.
The terminal voltage specs of the 2SC2655 transistor are collector to base voltage is 50V, collector to emitter voltage is 50V, and emitter to base voltage is 5V.
The collector to emitter saturation voltage is 0.5V, it is the voltage value of region switching of 2655 transistor.
The overall voltage specifications of the 2655 transistor show that it is a low-power transistor that had small applications.
The collector current value of 2655 transistor is 2A, which means this transistor only works under load 2Ampere.
The base current value of the 2SC2655 transistor is 0.5A, this is the maximum current value for the base of the transistor.
Overall current specifications of the 2655 transistor show that it is a device mainly used for high power switching and driver applications.
The power dissipation of the 2SC2655 transistor is 900mW, it is the power dissipation of the device which is been more related to the package of the transistor.
DC current gain specs
The current gain value of the 2655 transistor is 40 to 240hFE, the gain value of the transistor shows, that it is a device having small amplifier applications.
The transition frequency value of the 2655 transistor is 100MHz, the frequency values show it had a good range.
The junction temperature of -55 to 150℃, the heat capacity of the transistor is mainly dependent on the capacity of the device.
Turn ON time
The turn ON time of 2655 transistor is 0.1us
2655/ 2SC2655 transistor DATASHEET
If you need the datasheet in pdf please click this link
2655/ 2SC2655 transistor equivalent
The transistors such as 2SC3328, STX715, KTC3209, 2SA1162, and MJE182 are the equivalents devices of the 2SC2655 transistor. The electrical specifications of these transistors are the same, so we can use them as the equivalent of 2655 transistors.
2655 transistor complementary pair
The 2SC2655 NPN transistor has a 2SA1020 PNP transistor complementary, the electrical specs of both transistors are the same and opposite.
SMD equivalent of 2SC2655/ 2655 transistor
The SMD transistors such as 2SC2873 (SOT-89), 2SC3444 (SOT-89), BCP55C (SOT-223) and BCX55 (SOT-89) are SMD version equivalent of 2655 transistor.
All of these transistors had different power dissipation values when we compare them with the 2SC2655 transistor.
2655 vs 2SC3328
In this table, we try to list the electrical specifications of three transistor devices such as C2073, 2SD401, and TIP41F, this listing is really helpful for a better understanding of the devices.
|Collector to base voltage (VCB)
|Collector to emitter voltage (VCE)
|Emitter to base voltage (VEB)
|Collector to emitter saturation voltage (VCE (SAT))
|0.15 to 0.5V
|Collector current (IC)
|Junction temperature (TJ)
|-55 to +150°C
|-55 to +150°C
|Transition frequency (FT)
|40 to 240hFE
|40 to 240hFE
|Turn ON time
Characteristics curves of 2SC2655 transistor
The figure shows the 2SC2655 transistor characteristics, the graph is plotted with collector current vs collector to emitter voltage.
At different base current values, the current variations happen at the transistor with respect to the collector to emitter voltages.
The figure shows the current gain characteristics of the 2SC2655 transistor, the graph is plotted with dc current gain vs collector current.
At a fixed collector to emitter voltages, the gain variation is plotted at different temperature values.
2655/2SC2655 transistor applications
- Power amplifier applications
- Power supply applications
- Motor controller
- Audio amplifier stages
- Radio transmitter applications