15N20 MOSFET
15N20 specification
- 15N20 is an enhancement N-channel POWER MOSFET device
- Drain to source voltage (VDS) is 200V
- Gate to source voltage (VGS) is +/- 30V
- Gate to the threshold voltage (VGS (th)) is 2V to 4V
- Drain current (ID) is 15A
- Pulsed drain current (IDM) is 60A
- Power dissipation (PD) is 40W
- Total gate charge (Qg) is 21nC
- Drain to source on-state resistance (RDS (ON)) 200 to 250mΩ
- Rise time (tr) is 20ns
- Thermal resistance junction to ambient (Rth j-A) is 5℃/W
- Junction temperature (TJ) is between -55 to 150℃
- Body diode reverse recovery (trr) 220ns
- Input capacitance is 610 to 800pf
- Output capacitance is 145 to 200pf
- Perfect on-state resistance
- High switching speed
- High current capacity
- Low gate charge
15N20 Pinout
| Pin Number | Pin Name | Description |
| 1 | GATE | The gate terminal will be used to trigger the MOSFET device |
| 2 | DRAIN | The drain is the input terminal of the MOSFET |
| 3 | SOURCE | In the source, terminal current flows out from the MOSFET |
15N20 package
15N20 is an n-channel power MOSFET device mainly used for converters and power applications, it had two sets of device coverings such as TO-220 & TO-251 packages.
TO-220 & TO-251 are the through-hole three terminal package which is made of epoxy/plastic materials for higher temperature capacity.
The TO-220 package had the provision to attach the heat sink with it for heat transfer purposes, but the TO-251 package doesn’t have a hole at them for attachment purposes.
15N20 MOSFET electrical specification explanation/application
Here in this section, we try to explain the electrical specifications of the 15N20 MOSFET device for better understanding.
Voltage specs
The terminal voltage specifications of 15N20 MOSFET are a drain-to-source voltage is 200V, a gate-to-source voltage is +/-30V, and gate to source threshold voltage is -2V and -4V.
The voltage values of the 15N20 MOSFET device indicate it is a high-voltage device having multiple applications.
Current specs
The drain current value of 15N20 MOSFET is 15A and the pulsed drain current value is 60A, the current value is the load capacity of the device.
Dissipation specs
The dissipation ability of 15N20 MOSFET is 40W, they are calculated by the product of voltage and current values at the transistor.
Drain to source on-state resistance
The drain to source on-state resistance is 200 to 250mΩ, these transistors have a higher value for most of the high-power circuit applications.
Maximum temperature
The maximum temperature value of 15N20 MOSFET is -55 to +150℃.
Thermal resistance junction to ambient
The thermal resistance, junction to ambient of 15N20 MOSFET is 62.5℃/W.
Total gate charge
The total gate charge of 15N20 MOSFET is 21nC.
Rise time
The rise time value of 15N20 MOSFET is 20ns, which is the switching speed of the device.
Input capacitance
The input capacitance value of 15N20 MOSFET is 610 to 800pF.
Output capacitance
The output capacitance value of 15N20 MOSFET is 145 to 200pF.
15N20 MOSFET DATASHEET
If you need the datasheet in pdf please click this link
15N20 MOSFET EQUIVALENT
15N20 POWER MOSFET has equivalent devices such as 15N06, 15N70, and 15N60, each of these MOSFET devices have the same set of electrical specifications.
15N20 MOSFETs are mainly used for POWER circuit and converter applications, so we need to consider the specs such as voltage, current, power dissipation, and on-state resistance at each of these MOSFET devices.
15N20 vs 15N06
Here in the table below we list and compare 15N20 vs 15N06 MOSFETs, this comparison is really useful for a better understanding of the device.
| Characteristics | 15N20 | 15N06 |
|---|---|---|
| Drain to source voltage (VDS)) | 200V | 60V |
| Gate to source voltage (Vgs) | 30V | 15V |
| Gate threshold voltage (Vg(th)) | 2 to 4V | 1- 1.6 – 2.5V |
| Drain current (Id) | 15A | 15A |
| Pulsed drain current | 60A | 60A |
| Total gate charge (Qg) | 21nC | 10 to 30nC |
| Power dissipation (PD) | 40W | 34W |
| Junction temperature (TJ) | -55 to +150°C | -65 to +150°C |
| Thermal resistance, junction to ambient | 62.5℃/W | 62.5℃/W |
| Drain to source on-state resistance (RDS) | 200 to 250mΩ | 75 to 100mΩ |
| Rise time (tr) | 20ns | 16.8 to 200ns |
| Reverse recovery time (trr) | 220ns | 36ns |
| Input capacitance | 610 to 800pf | 347 to 950pf |
| Output capacitance | 145 to 200pf | 136 to 310pf |
| Package | TO-220/TO-251 | TO-220 |
Characteristics curves of 15N20 MOSFET
The figure shows the static characteristics of 15N20 MOSFET, the graph plots with drain current vs drain to source voltage.
At different gate-to-source voltage values, the curve increases from a lower value, and at last, it becomes a sudden increase of current with respect to drain to source voltage.
The figure shows the on-state resistance characteristics curves of 15N20 MOSFET, and the graph plots with on-state resistance vs gate to source voltage.
At two different drain current values, the on-state resistance value dips towards a lower value with respect to the gate-to-source voltage.
The figure shows the safe operating area characteristics of 15N20 MOSFET, the graph plots with drain current, drain to source voltage, on-state resistance, switching speed, and temperature value.
Applications of 15N20 MOSFET
- Used for high-speed switching circuit of power source contra variations
- Automation circuit applications
- High-efficiency switching for AC/DC converters
- DC motor control circuit
- DC/DC converter used at igniter system
- Electric power steering
- Solar power system
- Industrial automation
- Robotics application
- Actuator applications
