13007T transistor
13007T transistor specification
- 13007T is an NPN transistor
- Collector to emitter voltage is 400V
- Collector to base voltage is 700V
- Emitter to base voltage is 9V
- Collector current is 8A
- Power dissipation is 2 to 80W
- DC current gain is 8 to 35hFE
- Transition frequency (FT) is 5MHz
- Junction temperature is between –55 to 150℃
- Collector to emitter saturation voltage (VCE (SAT)) is9V
- Rising time (tr) is 0.5us
- High voltage capacity
- High-temperature capacity
- High switching speed
- Power supply system device
2SC1815 transistor Pinout
| Pin Number | Pin Name | Description |
| 1 | Base | The base is used to trigger the transistor |
| 2 | Collector | Current flows through the collector |
| 3 | Emitter | The emitter is the output of the transistor, they are used to control the flow of current |
13007T transistor package
The package used at 13007T transistor in TO-220, is a larger package that is capable of withstanding higher power as a device.
The TO-220 is a package made with epoxy and metal on the backside, the epoxy plastic material had higher heat capacity and the metal is capable of transferring the temperature.
The larger size of the TO-220 will make the 13007T transistor used at higher power applications.
13007T transistor specification and application description
In this section we try to explain the electrical specifications of 13007t, this will help to know the transistor and select them for the proper applications.
Voltage specs
The collector to base voltage is 700V, collector to emitter voltage is 400v and emitter to base voltage is 9v, the higher voltage values show that it is apt for the power supply applications.
The collector to emitter saturation voltage value is 0.8v, it is the voltage that is needed to start the transistor device.
Current specs
The collector current value is 8A, which is the load capacity of the transistor device.
Dissipation specs
The power dissipation of the 13007t transistor is 2 to 80W, it is the power capacity or the temperature capacity of the transistor.
Current gain specs
The current gain of the 13007t transistor is 8 to 60hFE, the DC current gain of a device shows the amplification capacity of the transistor.
The 13007t transistor is mainly used for power supply-based applications, so the stabilization of the power is an important factor to consider.
Transition frequency
The transition frequency is 5MHz for the 13007t transistor, the frequency value is important for amplification and driver applications.
Junction temperature
The junction temperature of -55 to 150℃, this is the most common temperature value for a higher power transistor device.
Rising time
The rising time value of 13007t transistor is 0.5us, this is an important value at switching applications.
13007T transistor DATASHEET
If you need the datasheet in pdf please click this link
13007T transistor equivalent
The transistors such as ST13007, BUJ105A, 2SC2553, MJE13007, KSE13006 are the equivalent transistors of 13007t.
Each of the transistors had almost the same electrical specifications, so we can easily replace 13007t with any of these transistors.
But you need to check and verify the voltage and current values become the replacement process, the pinout of the transistor is different.
13007t vs mje13007a vs 2SC2553
The comparison table listed the three 13007t vs mje13007a vs 2sc2553 transistors electrical specs.
Characteristics 13007t Mje13007a 2SC2553
Collector to base voltage (VCB) 700V 850V 500V
Collector to emitter voltage (VCE) 400V 400V 400V
Emitter to base voltage (VEB) 9V 9V 7V
Collector current (IC) 8A 8A 7A
Power dissipation 2 to 80W 80W 40W
Junction temperature (TJ) 150°C 150°C 150°C
Transition frequency (FT) 5MHZ 4MHZ -
Noise (N) - - -
Gain (hFE) 8 to 35hFE 8 to 60hFE 8 to 12hFE
Package TO-220 TO-220 TO-220C
Each of the 13007t, Mje13007a, and 2sc2553 transistors had almost the same electrical specs, so we can easily replace one other.
The voltage specs of mje13007a are higher than the other two-transistor, so we can use them at high voltage power supply applications.
The DC current gain is higher at mje13007a, which means we can use them as a better stabilizer device.
13007t transistor characteristics
The figure shows the current gain vs collector current characteristics curve, at a constant collector to emitter voltage, the transistor produces a constant position and maintains that position.
And the collector current will increase at a proper rate and decrease after a specific point, and the curve produces between Hfe vs IC is a straight line and curve at the end.
The figure shows the static characteristics of the 13007t transistor, as we can see at different base current values, the collector current increases, and collector to emitter voltage increases.
Applications of 13007t transistor
- Electronic ballast
- Inverter circuit
- Fluorescent lamps
- Motor controller
- Switched-mode power supply
Inverter circuit using 13007t transistor
The figure shows the inverter circuit using a 13007t transistor, it is a sample inverter circuit made with two 13007 transistors.
The working of the circuit is very simple, the h-bridge made with two 13007t transistors will generate an AC signal and passes over to the transformer.
