13001 transistor specification

• It is a high voltage NPN BJT Transistor
• DC Current Gain range is 5 to 40h_FE
• Collector current (I_C) is 200mA
• Collector to base Voltage (V_CB) is 600V
• Collector to emitter voltage (V_CE) is 400v
• Emitter to base voltage (V_EB) is 7V
• Junction temperature (T_J) is 150°C
• Power dissipation at the transistor is 1000mW
• Transition frequency (F_T) is 8MHz

13001 transistor Pinout

Pin Number	Pin Name	Description
1	Emitter	Current flows through the emitter
2	Collector	Current flows through the collector
3	Base	Base triggers the transistor

 

13001 transistor package

The TO-126 is the package used on 13001 transistors, these types of component packages are been commonly used for power devices.

The temperature and voltage capacity of the 13001 is high and at the package, there is a hole for attaching it with heat sink

13001 transistor Description

The 13001 transistor is a high voltage NPN transistor type, the 13001 transistors had an important application at battery charger circuits.

The 13001 had higher voltage values, at the collector to base it is 600v, collector to emitter it is 400v and emitter to base it is 7v, and the higher voltage values make the 13001 at voltage regulated applications.

The maximum collector current at 13001 transistors is 200mA, this current value makes the maximum load allowed to this particular transistor.

The current gain at this transistor is starting at 5 to 40Hfe, this value is important on the amplifier circuits.

The power dissipation at the 13001 transistors is 1000Mw, this is known as the power transistor, so heat capacity is an important factor.

The 13001 transistors had a transition frequency value of 8MHz, this is important for the switching applications.

13001 transistor datasheet 

If you need the datasheet in pdf please click this link

13001 transistor Equivalent 

The transistor equivalent for 13001 is 13005ED, 13007, 13005A, and 13009, each of the transistors in this is almost identical to the 13001 transistors.

The physical and electrical specifications of each transistor are similar to the 13001 transistors.

But at the replacement of the 13001 transistors, we need to check and verify the electrical value.

13001 vs 13009 vs 13007

The table below will compare each transistor such as 13001 vs 13009 and 13001 vs 13007.

Characteristics	13001	13009	13007
Collector to base voltage (VCB)	600V	700V	700V
Collector to emitter voltage (VCE)	400V	400V	400V
Emitter to base voltage (VEB)	7V	9V	9V
Collector current (IC)	200mA	12A	8A
Power dissipation	1000mW	2W	80W
Junction temperature (TJ)	150°C	150°C	150°C
Transition frequency (FT)	8MHZ	4MHZ	14MHZ
Noise (N)	-	-	-
Gain (hFE)	5 to 40hFE	40hFE	40hFE
Package	TO-126	TO-220 TO-3P	TO-220

This table compares the electrical characteristics of all the transistors, this will help for the replacement process.

13001 uses

• General-purpose switching circuits
• Amplifier circuits
• Motor controller circuits
• Inverter circuits
• UPS circuits
• SMPS circuits
• Rectifier circuits
• Battery charger circuits

13001 transistor amplifier circuit

The figure shows the simple model amplifier circuit using 13001 transistors, the amplification capacity of 13001 is medium level.

This circuit consists of very few components, the input is taken from the audio jack and passes to the transistor input.

The 13001 transistors amplify the signal into a level and pass to the output speaker load.

We already mentioned, this is just a model circuit, we can build a larger amplifier circuit with a 13001 transistor. 

13001 transistor charger circuit

The figure shows the charger circuit using 13001 transistors, it is a 5v battery charger circuit consist of few components.

When the AC signal reaches the circuit, the rectifier section converts the AC into DC.

Then regulator component stabilizes the signal and passes to the 13001 transistors, the combined operation makes it a pure high rated DC.

Then the transformer pass to the next section, this is for filtering the DC.