IRF9640 MOSFET IRF9640 specification IRF9640 is a P-channel silicon gate POWER MOSFET transistor device. Drain to source voltage (VDS) is -200V Gate to source voltage (VGS) is +/- 20V Gate to…
IRF510 MOSFET IRF510 electrical specifications IRF510 is an N-channel power MOSFET device Drain to source voltage (VDS) is 100V Gate to source voltage (VGS) is +/- 20V Gate to the threshold…
D2499 transistor 2SD2499/ D2499 transistor electrical specifications D2499 is a triple diffused silicon mesa NPN epitaxial type transistor device Collector to emitter voltage is 600V Collector to base voltage is 1500V…
BUK453 MOSFET BUK453 electrical specification BUK453 is an N-channel enhancement mode MOSFET device Drain to source voltage (VDSS) is 100V Gate to source voltage (VGS) is +/- 30V Gate to the…
BF495 transistor BF495 transistor electrical specification BF495 is an NPN silicon medium-frequency transistor device Collector to emitter voltage (VCE) is 20V Collector to base voltage (VCB) is 30V Emitter to base…
BF199 transistor BF199 transistor electrical specification BF199 is an NPN silicon planer epitaxial RF amplifier transistor device Collector to emitter voltage (VCE) is 25V Collector to base voltage (VCB) is 40V…
B647 transistor B647 transistor electrical specification B647 is a plastic encapsulate PNP transistor device Collector to base voltage (VCB) is -120V Collector to emitter voltage (VCE) is -80V Emitter to base…
15N20 MOSFET 15N20 specification 15N20 is an enhancement N-channel POWER MOSFET device Drain to source voltage (VDS) is 200V Gate to source voltage (VGS) is +/- 30V Gate to the threshold…
2SD424 transistor 2SD424 transistor electrical specification 2SD424 is a silicon NPN POWER transistor device Collector to emitter voltage is 180V Collector to base voltage is 180V Emitter to base voltage is…
2SC1740 transistor C1740 transistor electrical specification 2SC1740 is an NPN silicon epitaxial planer transistor device Collector to emitter voltage is 50V Collector to base voltage is 60V Emitter to base voltage…